MVDF1N05ER2G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Elements :

2

Element Configuration :

Dual

Published :

2012

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

330pF @ 25V

Transistor Application :

SWITCHING

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Finish :

Tin (Sn)

Additional Feature :

LOGIC LEVEL COMPATIBLE, ULTRA LOW ON RESISTANCE

Mounting Type :

Surface Mount

Number of Terminations :

8

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

12.5nC @ 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

RoHS Status :

RoHS Compliant

Drain-source On Resistance-Max :

0.3Ohm

Avalanche Energy Rating (Eas) :

300 mJ

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

3V @ 250µA

DS Breakdown Voltage-Min :

50V

Rds On (Max) @ Id, Vgs :

300m Ω @ 1.5A, 10V

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

2W

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

8

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

2A

FET Feature :

Logic Level Gate

Drain Current-Max (Abs) (ID) :

2A

FET Type :

2 N-Channel (Dual)

Drain to Source Voltage (Vdss) :

50V

Pulsed Drain Current-Max (IDM) :

10A