MTP2P50EG
- Mfr.Part #
- MTP2P50EG
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET P-CH 500V 2A TO220AB
- Stock
- 17
- In Stock :
- 17
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 21 ns
- Current Rating :
- -2A
- Weight :
- 4.535924g
- Gate Charge (Qg) (Max) @ Vgs :
- 27nC @ 10V
- Drain to Source Breakdown Voltage :
- 500V
- Radiation Hardening :
- No
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Current - Continuous Drain (Id) @ 25°C :
- 2A Tc
- FET Type :
- P-Channel
- Power Dissipation :
- 75W
- Power Dissipation-Max :
- 75W Tc
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Case Connection :
- DRAIN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Surface Mount :
- No
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 5 days ago)
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Published :
- 2000
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Resistance :
- 6Ohm
- Length :
- 10.28mm
- Width :
- 4.82mm
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tube
- Pin Count :
- 3
- Pulsed Drain Current-Max (IDM) :
- 6A
- Vgs (Max) :
- ±20V
- Voltage - Rated DC :
- -500V
- Gate to Source Voltage (Vgs) :
- 20V
- Additional Feature :
- High Voltage
- Input Capacitance (Ciss) (Max) @ Vds :
- 1183pF @ 25V
- Continuous Drain Current (ID) :
- 2A
- Element Configuration :
- Single
- RoHS Status :
- RoHS Compliant
- Nominal Vgs :
- 3 V
- Package / Case :
- TO-220-3
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 6 Ω @ 1A, 10V
- Number of Terminations :
- 3
- Fall Time (Typ) :
- 19 ns
- Turn On Delay Time :
- 12 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- REACH SVHC :
- No SVHC
- Height :
- 9.28mm
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- Avalanche Energy Rating (Eas) :
- 80 mJ
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Threshold Voltage :
- -3V
- JEDEC-95 Code :
- TO-220AB
- Terminal Finish :
- Tin (Sn)
- Drain Current-Max (Abs) (ID) :
- 2A
- Rise Time :
- 14ns
- Datasheets
- MTP2P50EG

P-Channel Tube 6 Ω @ 1A, 10V ±20V 1183pF @ 25V 27nC @ 10V TO-220-3
MTP2P50EG Description
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage?blocking capability without degrading performance over time. In addition, this Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy-efficient design also offers a drain?to?source diode with a fast recovery time. Designed for high voltage, high-speed switching applications in power supplies, converters, and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
MTP2P50EG Features
Robust High Voltage Termination
Avalanche Energy Specified
Source?to?Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
This is a Pb?Free Device*
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