MTP23P06V
- Mfr.Part #
- MTP23P06V
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 23A TO220AB
- Stock
- 55,364
- In Stock :
- 55,364
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 weeks ago)
- Power Dissipation-Max :
- 90W Tc
- Case Connection :
- DRAIN
- Qualification Status :
- Not Qualified
- Mounting Type :
- Through Hole
- Lead Free :
- Contains Lead
- JESD-609 Code :
- e0
- Gate to Source Voltage (Vgs) :
- 15V
- Mount :
- Through Hole
- Reach Compliance Code :
- not_compliant
- Drain to Source Voltage (Vdss) :
- 60V
- Element Configuration :
- Single
- Pin Count :
- 3
- Power Dissipation :
- 90W
- Additional Feature :
- AVALANCHE RATED
- JEDEC-95 Code :
- TO-220AB
- Vgs (Max) :
- ±15V
- Avalanche Energy Rating (Eas) :
- 794 mJ
- Peak Reflow Temperature (Cel) :
- 235
- RoHS Status :
- Non-RoHS Compliant
- Turn-Off Delay Time :
- 41 ns
- Voltage - Rated DC :
- -60V
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-220-3
- Continuous Drain Current (ID) :
- 23A
- Input Capacitance (Ciss) (Max) @ Vds :
- 1620pF @ 25V
- Number of Terminations :
- 3
- Drain to Source Breakdown Voltage :
- -60V
- Pbfree Code :
- No
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On (Max) @ Id, Vgs :
- 120m Ω @ 11.5A, 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Operating Temperature :
- -55°C~175°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 23A Tc
- ECCN Code :
- EAR99
- Rise Time :
- 98.3ns
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Number of Pins :
- 3
- FET Type :
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 50nC @ 10V
- Published :
- 2001
- Number of Elements :
- 1
- Packaging :
- Tube
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Fall Time (Typ) :
- 62 ns
- Current Rating :
- -23A
- Transistor Application :
- SWITCHING
- Datasheets
- MTP23P06V

P-Channel Tube 120m Ω @ 11.5A, 10V ±15V 1620pF @ 25V 50nC @ 10V 60V TO-220-3
MTP23P06V Description
High energy can be withstood by this Power MOSFET in the avalanche and commutation modes. These devices are especially well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. They are designed for low voltage, high speed switching applications in power supplies, converters, and power motor controls.
MTP23P06V Features
-
Avalanche Energy Specified
-
IDSS and VDS(on) Specified at Elevated Temperature
-
Pb?Free Package is Available*
MTP23P06V Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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