MTP20N15E
- Mfr.Part #
- MTP20N15E
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 20A TO220AB
- Stock
- 36
- In Stock :
- 36
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Avalanche Energy Rating (Eas) :
- 60 mJ
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Current Rating :
- 20A
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 49 ns
- Mount :
- Through Hole
- Reach Compliance Code :
- not_compliant
- ECCN Code :
- EAR99
- Qualification Status :
- Not Qualified
- Packaging :
- Tube
- Pin Count :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 55.9nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 130m Ω @ 10A, 10V
- RoHS Status :
- Non-RoHS Compliant
- Package / Case :
- TO-220-3
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Power Dissipation-Max :
- 112W Tc
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- JEDEC-95 Code :
- TO-220AB
- Voltage - Rated DC :
- 150V
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Case Connection :
- DRAIN
- Terminal Finish :
- Tin/Lead (Sn80Pb20)
- JESD-609 Code :
- e0
- Power Dissipation :
- 112W
- Drain to Source Breakdown Voltage :
- 150V
- Published :
- 2000
- Input Capacitance (Ciss) (Max) @ Vds :
- 1627pF @ 25V
- Continuous Drain Current (ID) :
- 20A
- Rise Time :
- 77ns
- Gate to Source Voltage (Vgs) :
- 20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Peak Reflow Temperature (Cel) :
- 240
- Lead Free :
- Contains Lead
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Element Configuration :
- Single
- Pbfree Code :
- No
- Vgs (Max) :
- ±20V
- Turn-Off Delay Time :
- 33 ns
- Pulsed Drain Current-Max (IDM) :
- 60A
- FET Type :
- N-Channel
- Number of Pins :
- 3
- Datasheets
- MTP20N15E

N-Channel Tube 130m Ω @ 10A, 10V ±20V 1627pF @ 25V 55.9nC @ 10V TO-220-3
Description
The MTP20N15E is a Power MOSFET with 20 Amps, 150 Volts N?Channel TO?220. High energy can be withstood by this Power MOSFET in the avalanche and commutation modes. Another feature of the energy-efficient design is a drain-to-source diode with a quick recovery period. These devices are especially well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. They are designed for low voltage, high-speed switching applications in power converters and PWM motor controls.
Features
-
Diode is Characterized for Use in Bridge Circuits
-
IDSS and VDS(on) Specified at Elevated Temperature
-
This is a Pb?Free Device*
-
Avalanche Energy Specified
-
Source?to?Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
Applications
-
Low voltage
-
High speed switching applications in power converters
-
PWM motor controls
-
Solar inverters
-
Automotive applications
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