MTP2P50E

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

RoHS Status :

Non-RoHS Compliant

Rds On (Max) @ Id, Vgs :

6 Ω @ 1A, 10V

Power Dissipation :

75W

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Mount :

Through Hole

Drain to Source Voltage (Vdss) :

500V

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 5 days ago)

FET Type :

P-Channel

Drain Current-Max (Abs) (ID) :

2A

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Qualification Status :

Not Qualified

Terminal Finish :

Tin/Lead (Sn/Pb)

Time@Peak Reflow Temperature-Max (s) :

30

Packaging :

Tube

Length :

10.28mm

Pulsed Drain Current-Max (IDM) :

6A

Lead Free :

Contains Lead

Drain to Source Breakdown Voltage :

-500V

Reach Compliance Code :

not_compliant

Number of Pins :

3

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

1183pF @ 25V

Package / Case :

TO-220-3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Voltage - Rated DC :

-500V

Turn-Off Delay Time :

21 ns

Additional Feature :

High Voltage

Peak Reflow Temperature (Cel) :

240

Pin Count :

3

Pbfree Code :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Drain-source On Resistance-Max :

6Ohm

Height :

9.28mm

Current Rating :

-2A

Gate to Source Voltage (Vgs) :

20V

Width :

4.82mm

Vgs(th) (Max) @ Id :

4V @ 250µA

Element Configuration :

Single

Rise Time :

14ns

JEDEC-95 Code :

TO-220AB

Avalanche Energy Rating (Eas) :

80 mJ

Published :

2000

Current - Continuous Drain (Id) @ 25°C :

2A Tc

Continuous Drain Current (ID) :

2A

Power Dissipation-Max :

75W Tc

Transistor Element Material :

SILICON

Fall Time (Typ) :

19 ns

Turn On Delay Time :

12 ns

JESD-609 Code :

e0