MT57W512H36JF-7.5
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- Mfr.Part #
- MT57W512H36JF-7.5
- Manufacturer
- Micron Technology
- Package / Case
- Datasheet
- Download
- Description
- DDR SRAM, 512KX36, 0.5NS PBGA165
- Stock
- 153
- In Stock ：
- 153
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- JESD-30 Code :
- R-PBGA-B165
- Memory IC Type :
- DDR SRAM
- Memory Width :
- 36
- Supply Voltage-Min (Vsup) :
- 1.7 V
- Product Status :
- Active
- Parallel/Serial :
- Parallel
- Terminal Finish :
- TIN SILVER COPPER
- Series :
- *
- Qualification Status :
- COMMERCIAL
- Manufacturer :
- Rochester Electronics LLC
- Seated Height-Max :
- 1.2 mm
- Package :
- Bulk
- Terminal Position :
- BOTTOM
- Number of Words :
- 524288 words
- Organization :
- 512KX36
- Package Shape :
- RECTANGULAR
- JESD-609 Code :
- e1
- Terminal Form :
- Ball
- Reach Compliance Code :
- Unknown
- Pin Count :
- 165
- Technology :
- CMOS
- Additional Feature :
- PIPELINED ARCHITECTURE
- Number of Functions :
- 1
- Number of Terminals :
- 165
- Terminal Pitch :
- 1 mm
- Surface Mount :
- yes
- Operating Mode :
- SYNCHRONOUS
- Width :
- 13 mm
- Memory Density :
- 18874368 bit
- Length :
- 15 mm
- Supply Voltage-Max (Vsup) :
- 1.9 V
- Temperature Grade :
- COMMERCIAL
- Datasheets
- MT57W512H36JF-7.5
Memory Micron Technology MT57W512H36JF-7.5 Overview
The Memory Micron Technology MT57W512H36JF-7.5 represents a pinnacle of technological innovation in the field of high-speed digital storage. Manufactured by Micron Technology, this DDR SRAM component features an impressive configuration of 512KX36 bits, ensuring swift access with a minimal cycle time of 0.5 nanoseconds. Designed for high-performance applications where speed and reliability are paramount, this memory module encapsulates state-of-the-art features in a compact PBGA165 package. The Memory Micron Technology MT57W512H36JF-7.5 is tailored to meet the rigorous demands of advanced computing systems, offering a robust solution for developers aiming to enhance system responsiveness and manage vast datasets efficiently.
MT57W512H36JF-7.5 Features
This DDR SRAM from Micron Technology showcases several distinctive features:
- High-Speed Data Access: The 0.5 ns access time facilitates ultra-fast read and write operations, critical for real-time processing.
- Dense Memory Configuration: With a configuration of 512KX36, it offers ample space for large-scale applications, while maintaining a balance between density and speed.
- Compact Form Factor: Housed in a PBGA165 package, it minimizes space consumption on circuit boards, making it ideal for compact systems with limited PCB real estate.
- Robust Reliability: Built to Micron’s rigorous quality standards, this memory module ensures reliability and durability for intensive operational environments.
MT57W512H36JF-7.5 Applications
The versatility of the MT57W512H36JF-7.5 DDR SRAM allows it to be integrated into a variety of high-demand applications, including:
- Advanced Computing Systems: Enhances processing capabilities in servers and high-performance computers by providing rapid access to temporary data needed for large-scale computations.
- Telecommunications Equipment: Supports the high throughput and low latency requirements in telecommunications infrastructure, aiding in faster data transmission and improved network reliability.
- Embedded Systems: Ideal for use in embedded applications due to its high speed and compact size, contributing to efficient and responsive control systems.
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