MT57V512H36EF-5
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- Mfr.Part #
- MT57V512H36EF-5
- Manufacturer
- Micron Technology
- Package / Case
- Datasheet
- Download
- Description
- DDR SRAM, 512KX36, 2.4NS, CMOS,
- Stock
- 269
- In Stock ：
- 269
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Standby Voltage-Min :
- 2.4 V
- Qualification Status :
- Not Qualified
- Manufacturer :
- Micron Technology Inc
- Supply Voltage-Min (Vsup) :
- 2.4 V
- Surface Mount :
- yes
- Length :
- 15 mm
- JESD-609 Code :
- e0
- Width :
- 13 mm
- Pin Count :
- 165
- Memory IC Type :
- DDR SRAM
- Subcategory :
- SRAMs
- Parallel/Serial :
- Parallel
- Power Supplies :
- 1.5/1.8,2.5 V
- Product Status :
- Active
- RoHS :
- Non-Compliant
- Standby Current-Max :
- 0.18 A
- Temperature Grade :
- COMMERCIAL
- Operating Mode :
- SYNCHRONOUS
- Memory Density :
- 18874368 bit
- Output Characteristics :
- 3-STATE
- Reach Compliance Code :
- Unknown
- Number of Words :
- 524288 words
- Terminal Form :
- Ball
- Additional Feature :
- PIPELINED ARCHITECTURE
- I/O Type :
- COMMON
- Terminal Pitch :
- 1 mm
- Number of Terminals :
- 165
- Memory Width :
- 36
- Organization :
- 512KX36
- Package :
- Bulk
- JESD-30 Code :
- R-PBGA-B165
- Technology :
- CMOS
- HTS Code :
- 8542.32.00.41
- Supply Current-Max :
- 0.3 mA
- Seated Height-Max :
- 1.2 mm
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Package Shape :
- RECTANGULAR
- Terminal Position :
- BOTTOM
- ECCN Code :
- 3A991.B.2.A
- Series :
- *
- Supply Voltage-Max (Vsup) :
- 2.6 V
- Number of Functions :
- 1
- Datasheets
- MT57V512H36EF-5
Memory Micron Technology MT57V512H36EF-5 Overview
Introducing the MT57V512H36EF-5, a cutting-edge DDR SRAM module meticulously crafted by Micron Technology. Engineered for excellence, this high-performance memory solution sets a new standard in the industry, catering to the demands of modern data-centric applications.
With a capacity of 512KX36 and an impressive speed of 2.4NS, this CMOS-based DDR SRAM module ensures lightning-fast data access and seamless operation, making it an ideal choice for mission-critical tasks where speed and reliability are paramount.
Designed with precision and backed by Micron's legacy of innovation, the MT57V512H36EF-5 redefines the boundaries of memory technology, empowering businesses to elevate their performance and stay ahead in today's competitive landscape.
MT57V512H36EF-5 Features
- High Capacity: Offers a generous capacity of 512KX36, providing ample storage space for data-intensive applications.
- Rapid Speed: Boasts an impressive speed of 2.4NS, ensuring swift data access and seamless operation even in the most demanding scenarios.
- CMOS Technology: Utilizes advanced CMOS technology, enhancing efficiency and reducing power consumption for optimized performance.
- Reliability: Engineered with precision and rigorously tested for reliability, guaranteeing consistent performance under varying conditions.
- Compatibility: Designed to seamlessly integrate with a wide range of systems and platforms, offering versatility and ease of deployment.
MT57V512H36EF-5 Applications
- Data Servers: The MT57V512H36EF-5 is ideal for use in data servers, where its high capacity and rapid speed ensure efficient data processing and storage. Whether in cloud-based environments or enterprise server rooms, this memory module delivers unmatched performance and reliability.
- Networking Equipment: In networking equipment such as routers and switches, the MT57V512H36EF-5 plays a critical role in ensuring seamless communication and data transfer. Its rapid speed and compatibility make it a preferred choice for networking infrastructure.
- Telecommunication Systems: Telecommunication systems require memory solutions that can handle large volumes of data while maintaining low latency. The MT57V512H36EF-5 meets these demands with its high capacity, rapid speed, and reliability, making it indispensable in telecom infrastructure.
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