MT57V1MH18EF-6

Manufacturer :

Micron Technology

Product Category :

Memory

Subcategory :

SRAMs

ECCN Code :

3A991.B.2.A

Number of Functions :

1

Width :

13 mm

I/O Type :

COMMON

Product Status :

Active

Parallel/Serial :

Parallel

Additional Feature :

PIPELINED ARCHITECTURE

Manufacturer :

Micron Technology Inc

Memory IC Type :

DDR SRAM

Pin Count :

165

Package Shape :

RECTANGULAR

Number of Terminals :

165

Reach Compliance Code :

Unknown

Qualification Status :

Not Qualified

Package :

Bulk

Power Supplies :

1.5/1.8,2.5 V

Terminal Finish :

Tin/Lead (Sn/Pb)

Surface Mount :

yes

Output Characteristics :

3-STATE

Seated Height-Max :

1.2 mm

Temperature Grade :

COMMERCIAL

Number of Words :

1048576 words

JESD-30 Code :

R-PBGA-B165

Series :

*

Supply Voltage-Max (Vsup) :

2.6 V

Memory Density :

18874368 bit

Supply Voltage-Min (Vsup) :

2.4 V

Terminal Position :

BOTTOM

Length :

15 mm

JESD-609 Code :

e0

Organization :

1MX18

Standby Voltage-Min :

2.4 V

Technology :

CMOS

Supply Current-Max :

0.2 mA

Terminal Form :

Ball

Memory Width :

18

Standby Current-Max :

0.15 A

HTS Code :

8542.32.00.41

Operating Mode :

SYNCHRONOUS

Terminal Pitch :

1 mm