MT57W512H36BF-7.5

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Mfr.Part #
MT57W512H36BF-7.5
Manufacturer
Micron Technology
Package / Case
165-TBGA
Datasheet
Download
Description
IC SRAM 18MBIT PARALLEL 165FBGA
Stock
325
In Stock :
325

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Manufacturer :
Micron Technology
Product Category :
Memory
Pin Count :
165
Qualification Status :
COMMERCIAL
Memory IC Type :
DDR SRAM
Organization :
512KX36
Product Status :
Active
Package :
Bulk
Number of Words :
524288 words
Memory Interface :
Parallel
JESD-609 Code :
e1
Terminal Form :
Ball
Clock Frequency :
133 MHz
Terminal Pitch :
1 mm
Write Cycle Time - Word, Page :
-
Reach Compliance Code :
Unknown
Number of Terminals :
165
Voltage - Supply :
1.7V ~ 1.9V
Series :
-
Memory Type :
Volatile
Supply Voltage-Min (Vsup) :
1.7 V
Memory Density :
18874368 bit
Supplier Device Package :
165-FBGA (13x15)
Technology :
SRAM - DDR2
Surface Mount :
yes
Memory Organization :
512K x 36
Memory Format :
SRAM
Temperature Grade :
COMMERCIAL
Number of Functions :
1
Access Time :
7.5 ns
Width :
13 mm
Length :
15 mm
Parallel/Serial :
Parallel
Terminal Position :
BOTTOM
Operating Mode :
SYNCHRONOUS
Manufacturer :
Rochester Electronics LLC
Package Shape :
RECTANGULAR
Memory Size :
18Mbit
Base Product Number :
MT57W512H
Additional Feature :
PIPELINED ARCHITECTURE
Package / Case :
165-TBGA
Seated Height-Max :
1.2 mm
Mounting Type :
Surface Mount
Memory Width :
36
Terminal Finish :
TIN SILVER COPPER
Supply Voltage-Max (Vsup) :
1.9 V
Operating Temperature :
0°C ~ 70°C (TA)
JESD-30 Code :
R-PBGA-B165
Datasheets
MT57W512H36BF-7.5
Introducing Memory Micron Technology MT57W512H36BF-7.5 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:165-TBGA, Mounting Type:Surface Mount, Operating Temperature:0°C ~ 70°C (TA), MT57W512H36BF-7.5 pinout, MT57W512H36BF-7.5 datasheet PDF, MT57W512H36BF-7.5 amp .Beyond Memory Micron Technology MT57W512H36BF-7.5 ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Micron Technology MT57W512H36BF-7.5


Memory Micron Technology MT57W512H36BF-7.5 Overview

Introducing the MT57W512H36BF-7.5, an advanced Integrated Circuit (IC) meticulously crafted by Micron Technology. Designed to meet the burgeoning demands of modern technological applications, this IC represents a pinnacle in SRAM technology. Boasting a capacious 18MBit parallel memory, housed within a robust 165FBGA package, it stands as a testament to Micron's unwavering commitment to innovation and excellence.

With its parallel architecture, this IC ensures lightning-fast data access, making it ideal for applications where speed and reliability are paramount. From embedded systems to networking equipment, the MT57W512H36BF-7.5 delivers unparalleled performance, setting a new standard in memory integration.

Experience the epitome of memory technology with Micron's MT57W512H36BF-7.5, where speed, efficiency, and reliability converge to redefine possibility.

MT57W512H36BF-7.5 Features

  • High-capacity: 18MBit parallel memory
  • Compact form factor: 165FBGA package
  • Parallel architecture for rapid data access
  • Manufactured by Micron Technology, a leader in memory solutions
  • Robust and reliable performance

MT57W512H36BF-7.5 Applications

  • Embedded Systems: The MT57W512H36BF-7.5 is ideal for embedded systems where high-speed data processing is essential. From industrial automation to automotive electronics, its parallel architecture ensures swift and efficient operation, enhancing overall system performance.
  • Networking Equipment: In networking applications, the MT57W512H36BF-7.5 shines with its rapid data access capabilities. Whether in routers, switches, or network storage devices, this IC facilitates seamless data transmission, enabling smooth and reliable network operation.
  • Telecommunications Infrastructure: Powering telecommunications infrastructure, the MT57W512H36BF-7.5 ensures uninterrupted data flow in communication networks. Its high-capacity memory and parallel architecture make it indispensable for applications such as base stations, optical transport systems, and access network equipment.
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