MT54V512H36EF-6

Manufacturer :

Micron Technology

Product Category :

Memory

Terminal Position :

BOTTOM

Memory Type :

Volatile

Additional Feature :

PIPELINED ARCHITECTURE

Operating Temperature :

0°C ~ 70°C (TA)

Package :

Bulk

Organization :

512KX36

Reach Compliance Code :

Unknown

Memory Density :

18874368 bit

Memory Size :

18Mbit

Terminal Form :

Ball

Package / Case :

165-TBGA

Supply Voltage-Min (Vsup) :

2.4 V

Package Shape :

RECTANGULAR

Product Status :

Active

Clock Frequency :

167 MHz

Write Cycle Time - Word, Page :

-

Mounting Type :

Surface Mount

Supply Voltage-Max (Vsup) :

2.6 V

RoHS :

Non-Compliant

JESD-609 Code :

e1

Memory IC Type :

QDR SRAM

Surface Mount :

yes

Series :

QDR™

Seated Height-Max :

1.2 mm

Number of Words :

524288 words

Memory Width :

36

Base Product Number :

MT54V512

Memory Organization :

512K x 36

Length :

15 mm

Technology :

SRAM - Quad Port, Synchronous

Qualification Status :

COMMERCIAL

JESD-30 Code :

R-PBGA-B165

Supplier Device Package :

165-FBGA (13x15)

Temperature Grade :

COMMERCIAL

Number of Terminals :

165

Terminal Pitch :

1 mm

Pin Count :

165

Width :

13 mm

Parallel/Serial :

Parallel

Manufacturer :

Rochester Electronics LLC

Number of Functions :

1

Operating Mode :

SYNCHRONOUS

Memory Interface :

Parallel

Terminal Finish :

TIN SILVER COPPER

Voltage - Supply :

2.4V ~ 2.6V

Memory Format :

SRAM