MT54V512H18AF-7.5

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Mfr.Part #
MT54V512H18AF-7.5
Manufacturer
Micron Technology
Package / Case
Datasheet
Download
Description
QDR SRAM, 512KX18, 3NS PBGA165
Stock
5,119
In Stock :
5,119

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Manufacturer :
Micron Technology
Product Category :
Memory
Memory IC Type :
QDR SRAM
Supply Voltage-Min (Vsup) :
2.4 V
Package Shape :
RECTANGULAR
Package :
Bulk
Operating Mode :
SYNCHRONOUS
Parallel/Serial :
Parallel
Organization :
512KX18
Memory Density :
9437184 bit
JESD-609 Code :
e1
Product Status :
Active
Number of Terminals :
165
Terminal Finish :
TIN SILVER COPPER
Technology :
CMOS
Number of Words :
524288 words
Temperature Grade :
COMMERCIAL
Memory Width :
18
Additional Feature :
PIPELINED ARCHITECTURE
Reach Compliance Code :
Unknown
Supply Voltage-Max (Vsup) :
2.6 V
Series :
*
Width :
13 mm
Qualification Status :
COMMERCIAL
Surface Mount :
yes
Manufacturer :
Rochester Electronics LLC
Terminal Pitch :
1 mm
Terminal Position :
BOTTOM
Length :
15 mm
Pin Count :
165
JESD-30 Code :
R-PBGA-B165
Number of Functions :
1
Seated Height-Max :
1.2 mm
Terminal Form :
Ball
Datasheets
MT54V512H18AF-7.5
Introducing Memory Micron Technology MT54V512H18AF-7.5 from Chip IC,where excellence meets affordability. This product stands out with its MT54V512H18AF-7.5 pinout, MT54V512H18AF-7.5 datasheet PDF, MT54V512H18AF-7.5 amp .Beyond Memory Micron Technology MT54V512H18AF-7.5 ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Micron Technology MT54V512H18AF-7.5


[Memory Micron Technology MT54V512H18AF-7.5] Overview

Introducing the cutting-edge Memory Micron Technology MT54V512H18AF-7.5, a high-performance QDR SRAM solution meticulously crafted for demanding applications. Engineered by Micron Technology, a leader in semiconductor innovation, this product epitomizes reliability, speed, and efficiency in integrated circuits.

Designed to meet the stringent requirements of modern electronic systems, the MT54V512H18AF-7.5 offers a capacity of 512KX18 and boasts a lightning-fast access time of 3ns. Encapsulated in a PBGA165 package, this component ensures seamless integration and optimal performance in various applications.

MT54V512H18AF-7.5 Features

  • High-Speed Performance: With an access time of just 3ns, this QDR SRAM delivers rapid data retrieval, ideal for time-sensitive operations.
  • Ample Capacity: The 512KX18 configuration provides ample storage space for critical data, facilitating efficient processing and retrieval.
  • PBGA165 Package: Enclosed in a PBGA165 package, the MT54V512H18AF-7.5 ensures robustness, thermal stability, and compatibility with modern circuit designs.
  • Reliable Construction: Engineered by Micron Technology, a trusted name in semiconductor manufacturing, this product guarantees reliability, longevity, and consistent performance.
  • Optimized for Demanding Applications: From networking equipment to industrial automation, this component excels in high-performance computing, telecommunications, and aerospace systems.

MT54V512H18AF-7.5 Applications

  • Networking Equipment: The MT54V512H18AF-7.5 is integral to routers, switches, and network interface cards, enabling fast data processing and efficient packet switching in telecommunications infrastructure.
  • Industrial Automation: In industrial control systems and robotic applications, this SRAM solution facilitates real-time data processing, ensuring precise control and seamless operation of manufacturing processes.
  • Aerospace Systems: From avionics to satellite communication, the MT54V512H18AF-7.5 plays a crucial role in aerospace electronics, offering unparalleled speed and reliability for mission-critical operations in extreme environments.
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Shipping Method

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Shipping Cost

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