MT54V1MH18EF-7.5

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Mfr.Part #
MT54V1MH18EF-7.5
Manufacturer
Micron Technology
Package / Case
Datasheet
Download
Description
QDR SRAM, 1MX18, 3NS PBGA165
Stock
24,830
In Stock :
24,830

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Manufacturer :
Micron Technology
Product Category :
Memory
Supply Voltage-Min (Vsup) :
2.4 V
Manufacturer :
Micron Technology Inc
Temperature Grade :
COMMERCIAL
Organization :
1MX18
Supply Voltage-Max (Vsup) :
2.6 V
Terminal Pitch :
1 mm
Number of Terminals :
165
Package Shape :
RECTANGULAR
Subcategory :
SRAMs
Terminal Form :
Ball
Length :
15 mm
Pin Count :
165
ECCN Code :
3A991.B.2.A
Power Supplies :
1.5/1.8,2.5 V
Supply Current-Max :
0.23 mA
Technology :
CMOS
Parallel/Serial :
Parallel
Operating Mode :
SYNCHRONOUS
Standby Voltage-Min :
2.4 V
JESD-609 Code :
e0
Terminal Finish :
Tin/Lead (Sn/Pb)
Memory IC Type :
QDR SRAM
Terminal Position :
BOTTOM
Surface Mount :
yes
Width :
13 mm
Memory Density :
18874368 bit
Number of Functions :
1
Product Status :
Active
Package :
Bulk
Factory Lead Time :
1 Week
Qualification Status :
Not Qualified
Additional Feature :
PIPELINED ARCHITECTURE
JESD-30 Code :
R-PBGA-B165
Seated Height-Max :
1.2 mm
HTS Code :
8542.32.00.41
Memory Width :
18
Standby Current-Max :
0.125 A
Reach Compliance Code :
Unknown
I/O Type :
Separate
Output Characteristics :
3-STATE
Number of Words :
1048576 words
Series :
*
Datasheets
MT54V1MH18EF-7.5
Introducing Memory Micron Technology MT54V1MH18EF-7.5 from Chip IC,where excellence meets affordability. This product stands out with its MT54V1MH18EF-7.5 pinout, MT54V1MH18EF-7.5 datasheet PDF, MT54V1MH18EF-7.5 amp .Beyond Memory Micron Technology MT54V1MH18EF-7.5 ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Micron Technology MT54V1MH18EF-7.5


Memory Micron Technology MT54V1MH18EF-7.5 Overview

Explore the cutting-edge performance of Micron Technology's MT54V1MH18EF-7.5 QDR SRAM, a high-speed memory solution designed to meet the demands of next-generation computing and networking applications. With a capacity of 1MX18 and an ultra-fast access time of 3 nanoseconds, this PBGA165-packaged SRAM delivers unparalleled data access speeds, making it ideal for latency-sensitive applications where every nanosecond counts.

Engineered with precision and reliability in mind, this memory module is crafted to withstand the rigors of industrial environments, ensuring consistent performance even under challenging conditions. Whether powering advanced telecommunications equipment, industrial automation systems, or high-performance computing clusters, the Micron Technology MT54V1MH18EF-7.5 sets the standard for speed, efficiency, and reliability in memory solutions.

MT54V1MH18EF-7.5 Features

  • High-speed QDR SRAM
  • 1MX18 capacity
  • Ultra-fast 3ns access time
  • PBGA165 package
  • Industrial-grade reliability
  • Designed for low-latency applications

MT54V1MH18EF-7.5 Applications

  • Telecommunications Equipment: Powering the backbone of modern communication networks, the MT54V1MH18EF-7.5 ensures lightning-fast data access in switches, routers, and base stations, enabling seamless connectivity and uninterrupted service.
  • Industrial Automation Systems: Enhancing efficiency and precision in manufacturing processes, this high-speed SRAM enables real-time data processing in PLCs, robotic controllers, and motion control systems, optimizing productivity and reducing downtime.
  • High-Performance Computing Clusters: Fueling the most demanding computational tasks, the MT54V1MH18EF-7.5 accelerates data-intensive applications in servers, supercomputers, and AI accelerators, delivering unparalleled performance for scientific research, financial modeling, and data analytics.
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Shipping Cost

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