MT54V1MH18EF-7.5
- Mfr.Part #
- MT54V1MH18EF-7.5
- Manufacturer
- Micron Technology
- Package / Case
- Datasheet
- Download
- Description
- QDR SRAM, 1MX18, 3NS PBGA165
- Stock
- 24,830
- In Stock :
- 24,830
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- * Fullname:
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Supply Voltage-Min (Vsup) :
- 2.4 V
- Manufacturer :
- Micron Technology Inc
- Temperature Grade :
- COMMERCIAL
- Organization :
- 1MX18
- Supply Voltage-Max (Vsup) :
- 2.6 V
- Terminal Pitch :
- 1 mm
- Number of Terminals :
- 165
- Package Shape :
- RECTANGULAR
- Subcategory :
- SRAMs
- Terminal Form :
- Ball
- Length :
- 15 mm
- Pin Count :
- 165
- ECCN Code :
- 3A991.B.2.A
- Power Supplies :
- 1.5/1.8,2.5 V
- Supply Current-Max :
- 0.23 mA
- Technology :
- CMOS
- Parallel/Serial :
- Parallel
- Operating Mode :
- SYNCHRONOUS
- Standby Voltage-Min :
- 2.4 V
- JESD-609 Code :
- e0
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Memory IC Type :
- QDR SRAM
- Terminal Position :
- BOTTOM
- Surface Mount :
- yes
- Width :
- 13 mm
- Memory Density :
- 18874368 bit
- Number of Functions :
- 1
- Product Status :
- Active
- Package :
- Bulk
- Factory Lead Time :
- 1 Week
- Qualification Status :
- Not Qualified
- Additional Feature :
- PIPELINED ARCHITECTURE
- JESD-30 Code :
- R-PBGA-B165
- Seated Height-Max :
- 1.2 mm
- HTS Code :
- 8542.32.00.41
- Memory Width :
- 18
- Standby Current-Max :
- 0.125 A
- Reach Compliance Code :
- Unknown
- I/O Type :
- Separate
- Output Characteristics :
- 3-STATE
- Number of Words :
- 1048576 words
- Series :
- *
- Datasheets
- MT54V1MH18EF-7.5

Memory Micron Technology MT54V1MH18EF-7.5 Overview
Explore the cutting-edge performance of Micron Technology's MT54V1MH18EF-7.5 QDR SRAM, a high-speed memory solution designed to meet the demands of next-generation computing and networking applications. With a capacity of 1MX18 and an ultra-fast access time of 3 nanoseconds, this PBGA165-packaged SRAM delivers unparalleled data access speeds, making it ideal for latency-sensitive applications where every nanosecond counts.
Engineered with precision and reliability in mind, this memory module is crafted to withstand the rigors of industrial environments, ensuring consistent performance even under challenging conditions. Whether powering advanced telecommunications equipment, industrial automation systems, or high-performance computing clusters, the Micron Technology MT54V1MH18EF-7.5 sets the standard for speed, efficiency, and reliability in memory solutions.
MT54V1MH18EF-7.5 Features
- High-speed QDR SRAM
- 1MX18 capacity
- Ultra-fast 3ns access time
- PBGA165 package
- Industrial-grade reliability
- Designed for low-latency applications
MT54V1MH18EF-7.5 Applications
- Telecommunications Equipment: Powering the backbone of modern communication networks, the MT54V1MH18EF-7.5 ensures lightning-fast data access in switches, routers, and base stations, enabling seamless connectivity and uninterrupted service.
- Industrial Automation Systems: Enhancing efficiency and precision in manufacturing processes, this high-speed SRAM enables real-time data processing in PLCs, robotic controllers, and motion control systems, optimizing productivity and reducing downtime.
- High-Performance Computing Clusters: Fueling the most demanding computational tasks, the MT54V1MH18EF-7.5 accelerates data-intensive applications in servers, supercomputers, and AI accelerators, delivering unparalleled performance for scientific research, financial modeling, and data analytics.
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