MT54V512H18EF-10

Manufacturer :

Micron Technology

Product Category :

Memory

Supply Voltage-Min (Vsup) :

2.4 V

Package / Case :

165-TBGA

Temperature Grade :

COMMERCIAL

Supplier Device Package :

165-FBGA (13x15)

Pin Count :

165

Memory Organization :

512K x 18

Number of Terminals :

165

Base Product Number :

MT54V512

Package :

Bulk

Voltage - Supply :

2.4V ~ 2.6V

Parallel/Serial :

Parallel

Number of Functions :

1

Supply Voltage-Max (Vsup) :

2.6 V

Seated Height-Max :

1.2 mm

Product Status :

Active

Memory Size :

9Mbit

Memory Width :

18

JESD-609 Code :

e1

JESD-30 Code :

R-PBGA-B165

Memory Format :

SRAM

Memory IC Type :

QDR SRAM

Additional Feature :

PIPELINED ARCHITECTURE

Manufacturer :

Rochester Electronics LLC

Organization :

512KX18

Series :

QDR™

Clock Frequency :

100 MHz

Mounting Type :

Surface Mount

Terminal Position :

BOTTOM

Number of Words :

524288 words

Operating Temperature :

0°C ~ 70°C (TA)

Width :

13 mm

Memory Type :

Volatile

Qualification Status :

COMMERCIAL

Length :

15 mm

Terminal Pitch :

1 mm

Memory Density :

9437184 bit

Operating Mode :

SYNCHRONOUS

Technology :

SRAM - Quad Port, Synchronous

Terminal Form :

Ball

Write Cycle Time - Word, Page :

-

Memory Interface :

Parallel

Package Shape :

RECTANGULAR

Terminal Finish :

TIN SILVER COPPER

Reach Compliance Code :

Unknown

Surface Mount :

yes