MT54V512H18EF-6

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Mfr.Part #
MT54V512H18EF-6
Manufacturer
Micron Technology
Package / Case
Datasheet
Download
Description
QDR SRAM, 512KX18, 2.5NS PBGA165
Stock
241
In Stock :
241

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Manufacturer :
Micron Technology
Product Category :
Memory
JESD-609 Code :
e1
Package :
Bulk
Reach Compliance Code :
Unknown
Number of Terminals :
165
Number of Words :
524288 words
JESD-30 Code :
R-PBGA-B165
Operating Mode :
SYNCHRONOUS
Organization :
512KX18
Terminal Finish :
TIN SILVER COPPER
Temperature Grade :
COMMERCIAL
Memory Width :
18
Width :
13 mm
Terminal Position :
BOTTOM
Series :
*
Supply Voltage-Max (Vsup) :
2.6 V
Qualification Status :
COMMERCIAL
Manufacturer :
Rochester Electronics LLC
Surface Mount :
yes
Terminal Form :
Ball
RoHS :
Compliant
Additional Feature :
PIPELINED ARCHITECTURE
Length :
15 mm
Memory IC Type :
QDR SRAM
Supply Voltage-Min (Vsup) :
2.4 V
Parallel/Serial :
Parallel
Terminal Pitch :
1 mm
Package Shape :
RECTANGULAR
Seated Height-Max :
1.2 mm
Memory Density :
9437184 bit
Number of Functions :
1
Product Status :
Active
Pin Count :
165
Technology :
CMOS
Datasheets
MT54V512H18EF-6
Introducing Memory Micron Technology MT54V512H18EF-6 from Chip IC,where excellence meets affordability. This product stands out with its MT54V512H18EF-6 pinout, MT54V512H18EF-6 datasheet PDF, MT54V512H18EF-6 amp .Beyond Memory Micron Technology MT54V512H18EF-6 ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Micron Technology MT54V512H18EF-6


Memory Micron Technology MT54V512H18EF-6 Overview

Introducing the Memory Micron Technology MT54V512H18EF-6, a high-performance Quad Data Rate (QDR) SRAM designed to meet the demanding needs of advanced computing systems. This state-of-the-art memory component features a dense 512K x 18 configuration, optimized for high-speed data transmission and low latency applications. Its robust architecture, combined with a fast access time of just 2.5 ns, makes it an ideal solution for systems requiring rapid data processing and throughput. Manufactured by Micron Technology, a leader in memory innovation, this product ensures reliability and performance for critical applications.

MT54V512H18EF-6 Features

The MT54V512H18EF-6 QDR SRAM boasts several key features that make it stand out in the market. Its quick access time of 2.5 nanoseconds allows for high-speed data retrieval, essential for performance-critical applications. Packaged in a compact 165-pin PBGA (Plastic Ball Grid Array), it offers a space-efficient solution without compromising on functionality or performance. Furthermore, the product's lead (Pb)-free design aligns with contemporary environmental standards, ensuring compliance with global electronic regulations.

MT54V512H18EF-6 Applications

  • Networking Equipment: Utilized in routers and switches for buffering and data packet storage, enhancing data flow and reducing latency.
  • High-performance Computing: Integral in supercomputers and data centers, where rapid access to large volumes of data is critical.
  • Telecommunications: Supports telecommunications infrastructure by providing high-speed data caching, crucial for real-time signal processing.
  • Industrial Automation: Applied in complex industrial controllers and automation systems, improving processing speed and reliability in real-time operations.
  • Medical Imaging Equipment: Essential in advanced medical imaging systems such as MRI and CT, for quick processing and manipulation of large image datasets.
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