MT54V512H18EF-6
- Mfr.Part #
- MT54V512H18EF-6
- Manufacturer
- Micron Technology
- Package / Case
- Datasheet
- Download
- Description
- QDR SRAM, 512KX18, 2.5NS PBGA165
- Stock
- 241
- In Stock :
- 241
Request A Quote(RFQ)
- * Fullname:
- * Company:
- * E-Mail:
- Phone:
- Comment:
- * Quantity:
- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- JESD-609 Code :
- e1
- Package :
- Bulk
- Reach Compliance Code :
- Unknown
- Number of Terminals :
- 165
- Number of Words :
- 524288 words
- JESD-30 Code :
- R-PBGA-B165
- Operating Mode :
- SYNCHRONOUS
- Organization :
- 512KX18
- Terminal Finish :
- TIN SILVER COPPER
- Temperature Grade :
- COMMERCIAL
- Memory Width :
- 18
- Width :
- 13 mm
- Terminal Position :
- BOTTOM
- Series :
- *
- Supply Voltage-Max (Vsup) :
- 2.6 V
- Qualification Status :
- COMMERCIAL
- Manufacturer :
- Rochester Electronics LLC
- Surface Mount :
- yes
- Terminal Form :
- Ball
- RoHS :
- Compliant
- Additional Feature :
- PIPELINED ARCHITECTURE
- Length :
- 15 mm
- Memory IC Type :
- QDR SRAM
- Supply Voltage-Min (Vsup) :
- 2.4 V
- Parallel/Serial :
- Parallel
- Terminal Pitch :
- 1 mm
- Package Shape :
- RECTANGULAR
- Seated Height-Max :
- 1.2 mm
- Memory Density :
- 9437184 bit
- Number of Functions :
- 1
- Product Status :
- Active
- Pin Count :
- 165
- Technology :
- CMOS
- Datasheets
- MT54V512H18EF-6

Memory Micron Technology MT54V512H18EF-6 Overview
Introducing the Memory Micron Technology MT54V512H18EF-6, a high-performance Quad Data Rate (QDR) SRAM designed to meet the demanding needs of advanced computing systems. This state-of-the-art memory component features a dense 512K x 18 configuration, optimized for high-speed data transmission and low latency applications. Its robust architecture, combined with a fast access time of just 2.5 ns, makes it an ideal solution for systems requiring rapid data processing and throughput. Manufactured by Micron Technology, a leader in memory innovation, this product ensures reliability and performance for critical applications.
MT54V512H18EF-6 Features
The MT54V512H18EF-6 QDR SRAM boasts several key features that make it stand out in the market. Its quick access time of 2.5 nanoseconds allows for high-speed data retrieval, essential for performance-critical applications. Packaged in a compact 165-pin PBGA (Plastic Ball Grid Array), it offers a space-efficient solution without compromising on functionality or performance. Furthermore, the product's lead (Pb)-free design aligns with contemporary environmental standards, ensuring compliance with global electronic regulations.
MT54V512H18EF-6 Applications
- Networking Equipment: Utilized in routers and switches for buffering and data packet storage, enhancing data flow and reducing latency.
- High-performance Computing: Integral in supercomputers and data centers, where rapid access to large volumes of data is critical.
- Telecommunications: Supports telecommunications infrastructure by providing high-speed data caching, crucial for real-time signal processing.
- Industrial Automation: Applied in complex industrial controllers and automation systems, improving processing speed and reliability in real-time operations.
- Medical Imaging Equipment: Essential in advanced medical imaging systems such as MRI and CT, for quick processing and manipulation of large image datasets.
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Shipping CostShipping Cost starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).If customer have shipping account, we can make shipment under customer’s shipping account with freight collect directly.
The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
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