MSR2N3637
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- Mfr.Part #
- MSR2N3637
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- RH SMALL-SIGNAL BJT
- Stock
- 1,366
- In Stock ：
- 1,366
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Connector Type :
- Discrete Wire
- Wire/Cable Type :
- Discrete
- RoHS :
- Compliant
- Current - Collector Cutoff (Max) :
- 10μA
- Series :
- Military, MIL-PRF-19500/357
- Power - Max :
- 1 W
- Color :
- Black
- Radiation Hardening :
- No
- Voltage - Collector Emitter Breakdown (Max) :
- 175 V
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Gender :
- FEMALE
- Product Status :
- Active
- Cable Length :
- 508 mm
- Frequency - Transition :
- -
- Supplier Device Package :
- TO-39 (TO-205AD)
- Packaging :
- Bulk
- Package :
- Bulk
- Mounting Type :
- Through Hole
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Transistor Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 50mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 50mA, 10V
- Termination :
- Crimp
- Current - Collector (Ic) (Max) :
- 1 A
- Number of Pins :
- 50
- Datasheets
- MSR2N3637
PNP -65°C ~ 200°C (TJ) 10µA TO-205AD, TO-39-3 Metal Can Bulk Through Hole
MSR2N3637 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 50mA, 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 50mA.TO-39 (TO-205AD) is the supplier device package for this product.This device displays a 175 V maximum voltage - Collector Emitter Breakdown.
MSR2N3637 Features
the DC current gain for this device is 100 @ 50mA, 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA
the supplier device package of TO-39 (TO-205AD)
MSR2N3637 Applications
There are a lot of Microchip
MSR2N3637 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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