MSR2N2222AUA
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- Mfr.Part #
- MSR2N2222AUA
- Manufacturer
- Microchip Technology
- Package / Case
- 4-SMD, No Lead
- Datasheet
- Download
- Description
- RH SMALL-SIGNAL BJT
- Stock
- 23,125
- In Stock ：
- 23,125
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Frequency - Transition :
- -
- Product Category :
- Bipolar Transistors - BJT
- Voltage - Collector Emitter Breakdown (Max) :
- 50 V
- Manufacturer :
- Microchip
- Supplier Device Package :
- UA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA, 10V
- Power - Max :
- 500 mW
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Product Status :
- Active
- Current - Collector (Ic) (Max) :
- 800 mA
- Series :
- Military, MIL-PRF-19500/255
- Package / Case :
- 4-SMD, No Lead
- Package :
- Tape and Reel (TR)
- Brand :
- Microchip Technology
- Product Type :
- BJTs - Bipolar Transistors
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max) :
- 50nA
- Subcategory :
- Transistors
- Mounting Type :
- Surface Mount
- Datasheets
- MSR2N2222AUA
NPN -65°C ~ 200°C (TJ) 50nA 4-SMD, No Lead Surface Mount
MSR2N2222AUA/TR Overview
In this device, the DC current gain is 100 @ 150mA, 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 50mA, 500mA.Product comes in the supplier's device package UA.There is a 50 V maximal voltage in the device due to collector-emitter breakdown.
MSR2N2222AUA/TR Features
the DC current gain for this device is 100 @ 150mA, 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the supplier device package of UA
MSR2N2222AUA/TR Applications
There are a lot of Microchip Technology
MSR2N2222AUA/TR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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