MSR2N2222AUA/TR
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- Mfr.Part #
- MSR2N2222AUA/TR
- Manufacturer
- Microchip Technology
- Package / Case
- 4-SMD, No Lead
- Datasheet
- Download
- Description
- RH SMALL-SIGNAL BJT
- Stock
- 17,616
- In Stock ：
- 17,616
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Subcategory :
- Transistors
- Frequency - Transition :
- -
- Current - Collector (Ic) (Max) :
- 800 mA
- Series :
- Military, MIL-PRF-19500/255
- Supplier Device Package :
- UA
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Mounting Type :
- Surface Mount
- Voltage - Collector Emitter Breakdown (Max) :
- 50 V
- Transistor Type :
- NPN
- Power - Max :
- 500 mW
- Product Status :
- Active
- Current - Collector Cutoff (Max) :
- 50nA
- Brand :
- Microchip Technology
- Manufacturer :
- Microchip
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Package / Case :
- 4-SMD, No Lead
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA, 10V
- Package :
- Tape and Reel (TR)
- Product Type :
- BJTs - Bipolar Transistors
- Product Category :
- Bipolar Transistors - BJT
- Datasheets
- MSR2N2222AUA/TR
NPN -65°C ~ 200°C (TJ) 50nA 4-SMD, No Lead Surface Mount
MSR2N2222AUA/TR Overview
In this device, the DC current gain is 100 @ 150mA, 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 50mA, 500mA.Product comes in the supplier's device package UA.There is a 50 V maximal voltage in the device due to collector-emitter breakdown.
MSR2N2222AUA/TR Features
the DC current gain for this device is 100 @ 150mA, 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the supplier device package of UA
MSR2N2222AUA/TR Applications
There are a lot of Microchip Technology
MSR2N2222AUA/TR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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