MSR2N2907AL
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- Mfr.Part #
- MSR2N2907AL
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AA, TO-18-3 Metal Can
- Datasheet
- Download
- Description
- RH SMALL-SIGNAL BJT
- Stock
- 30,602
- In Stock ：
- 30,602
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Series :
- Military, MIL-PRF-19500/291
- Product Status :
- Active
- Mounting Type :
- Through Hole
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Current - Collector Cutoff (Max) :
- 50nA
- Frequency - Transition :
- -
- Supplier Device Package :
- TO-18 (TO-206AA)
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Transistor Type :
- PNP
- Voltage - Collector Emitter Breakdown (Max) :
- 60 V
- Package / Case :
- TO-206AA, TO-18-3 Metal Can
- Manufacturer :
- Microchip
- Current - Collector (Ic) (Max) :
- 600 mA
- Package :
- Bulk
- Brand :
- Microchip Technology
- Product Category :
- Bipolar Transistors - BJT
- Power - Max :
- 500 mW
- Subcategory :
- Transistors
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA, 10V
- Product Type :
- BJTs - Bipolar Transistors
- Datasheets
- MSR2N2907AL
PNP -65°C ~ 200°C (TJ) 50nA TO-206AA, TO-18-3 Metal Can Through Hole
MSR2N2907AL Overview
In this device, the DC current gain is 100 @ 150mA, 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.6V @ 50mA, 500mA.Product comes in the supplier's device package TO-18 (TO-206AA).There is a 60 V maximal voltage in the device due to collector-emitter breakdown.
MSR2N2907AL Features
the DC current gain for this device is 100 @ 150mA, 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the supplier device package of TO-18 (TO-206AA)
MSR2N2907AL Applications
There are a lot of Microchip
MSR2N2907AL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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