MSD601-RT1
- Mfr.Part #
- MSD601-RT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A SC59
- Stock
- 5,218
- In Stock :
- 5,218
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 50V
- Terminal Position :
- Dual
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Pbfree Code :
- yes
- Collector Base Voltage (VCBO) :
- 60V
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 50V
- Base Part Number :
- MSD601
- Max Operating Temperature :
- 150°C
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Published :
- 2006
- Emitter Base Voltage (VEBO) :
- 7V
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Saturation Voltage :
- 500mV
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 10mA, 100mA
- Current - Collector Cutoff (Max) :
- 100nA
- Max Collector Current :
- 100mA
- Number of Pins :
- 3
- hFE Min :
- 210
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Surface Mount :
- yes
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 210 @ 2mA 10V
- Number of Elements :
- 1
- Factory Lead Time :
- 2 Weeks
- Collector Emitter Breakdown Voltage :
- 50V
- Voltage - Rated DC :
- 50V
- Polarity/Channel Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 200mW
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 200mW
- Min Operating Temperature :
- -55°C
- Radiation Hardening :
- No
- Transistor Type :
- NPN
- Terminal Form :
- Gull wing
- Current Rating :
- 100mA
- Datasheets
- MSD601-RT1

NPN 100nA 1 Elements 3 Terminations NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MSD601-RT1G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 210 @ 2mA 10V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 10mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 7V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 100mA.This device can take an input voltage of 50V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
MSD601-RT1G Features
the DC current gain for this device is 210 @ 2mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 7V
the current rating of this device is 100mA
MSD601-RT1G Applications
There are a lot of ON Semiconductor
MSD601-RT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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