MSD602-RT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Element Configuration :

Single

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Current Rating :

100mA

Polarity/Channel Type :

NPN

Current - Collector Cutoff (Max) :

100nA ICBO

Radiation Hardening :

No

Transistor Application :

AMPLIFIER

Published :

2009

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

hFE Min :

120

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Position :

Dual

Max Power Dissipation :

200mW

Packaging :

Tape and Reel (TR)

Contact Plating :

Tin

Emitter Base Voltage (VEBO) :

7V

Time@Peak Reflow Temperature-Max (s) :

40

Operating Temperature :

150°C TJ

Number of Terminations :

3

Collector Emitter Voltage (VCEO) :

50V

RoHS Status :

ROHS3 Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 150mA 10V

Number of Pins :

3

Transistor Type :

NPN

Collector Base Voltage (VCBO) :

60V

Pbfree Code :

yes

Max Collector Current :

500mA

Surface Mount :

yes

JESD-609 Code :

e3

Factory Lead Time :

8 Weeks

Transistor Element Material :

SILICON

Max Breakdown Voltage :

50V

Number of Elements :

1

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Collector Emitter Breakdown Voltage :

50V

Pin Count :

3

Voltage - Rated DC :

50V

Vce Saturation (Max) @ Ib, Ic :

600mV @ 30mA, 300mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

200mW

Lead Free :

Lead Free