MSD601-RT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Radiation Hardening :

No

Vce Saturation (Max) @ Ib, Ic :

500mV @ 10mA, 100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Operating Temperature :

150°C

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Number of Pins :

3

Lead Free :

Lead Free

Polarity/Channel Type :

NPN

Collector Emitter Voltage (VCEO) :

50V

Transistor Type :

NPN

Terminal Form :

Gull wing

Terminal Position :

Dual

Pbfree Code :

yes

Max Breakdown Voltage :

50V

Max Power Dissipation :

200mW

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Collector Emitter Breakdown Voltage :

50V

Power Dissipation :

200mW

Current Rating :

100mA

Current - Collector Cutoff (Max) :

100nA

Base Part Number :

MSD601

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

40

hFE Min :

210

Min Operating Temperature :

-55°C

Peak Reflow Temperature (Cel) :

260

Published :

2006

JESD-609 Code :

e3

Collector Emitter Saturation Voltage :

500mV

Collector Base Voltage (VCBO) :

60V

Terminal Finish :

Tin (Sn)

Element Configuration :

Single

Package / Case :

TO-236-3, SC-59, SOT-23-3

Voltage - Rated DC :

50V

Emitter Base Voltage (VEBO) :

7V

Number of Terminations :

3

Pin Count :

3

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Number of Elements :

1

Max Collector Current :

100mA

Factory Lead Time :

2 Weeks

DC Current Gain (hFE) (Min) @ Ic, Vce :

210 @ 2mA 10V