MPSA63RLRAG

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Mfr.Part #
MPSA63RLRAG
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Datasheet
Download
Description
TRANS PNP DARL 30V 0.5A TO92
Stock
13,041
In Stock :
13,041

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Packaging :
Tape and Reel (TR)
ECCN Code :
EAR99
Published :
2007
Collector Base Voltage (VCBO) :
30V
Max Breakdown Voltage :
30V
Lead Free :
Lead Free
Pbfree Code :
yes
JESD-609 Code :
e1
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Collector Emitter Saturation Voltage :
1.5V
Number of Pins :
3
RoHS Status :
RoHS Compliant
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Collector Emitter Breakdown Voltage :
30V
Voltage - Rated DC :
-30V
Number of Terminations :
3
Transition Frequency :
125MHz
Emitter Base Voltage (VEBO) :
10V
Current - Collector Cutoff (Max) :
100nA ICBO
Transistor Type :
PNP - Darlington
Continuous Collector Current :
-500mA
Transistor Element Material :
SILICON
Element Configuration :
Single
Power Dissipation :
625mW
Peak Reflow Temperature (Cel) :
260
Radiation Hardening :
No
Base Part Number :
MPSA63
Max Collector Current :
500mA
Collector Emitter Voltage (VCEO) :
30V
Mount :
Through Hole
Current Rating :
-500mA
Time@Peak Reflow Temperature-Max (s) :
40
Pin Count :
3
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 16 hours ago)
Transistor Application :
SWITCHING
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
-55°C~150°C TJ
DC Current Gain (hFE) (Min) @ Ic, Vce :
10000 @ 100mA 5V
Number of Elements :
1
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 100µA, 100mA
Frequency - Transition :
125MHz
Mounting Type :
Through Hole
Max Power Dissipation :
625mW
Polarity :
PNP
Terminal Position :
BOTTOM
Introducing Transistors - Bipolar (BJT) - Single onsemi MPSA63RLRAG from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), Number of Terminations:3, Base Part Number:MPSA63, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, MPSA63RLRAG pinout, MPSA63RLRAG datasheet PDF, MPSA63RLRAG amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MPSA63RLRAG ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MPSA63RLRAG


PNP - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole

MPSA63RLRAG Overview


DC current gain in this device equals 10000 @ 100mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 1.5V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 100μA, 100mA.Single BJT transistor is essential to maintain the continuous collector voltage at -500mA to achieve high efficiency.An emitter's base voltage can be kept at 10V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -500mA current rating.As a result, the part has a transition frequency of 125MHz.Breakdown input voltage is 30V volts.In extreme cases, the collector current can be as low as 500mA volts.

MPSA63RLRAG Features


the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 125MHz


MPSA63RLRAG Applications


There are a lot of ON Semiconductor
MPSA63RLRAG applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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