MPSA63RLRAG
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- Mfr.Part #
- MPSA63RLRAG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP DARL 30V 0.5A TO92
- Stock
- 13,041
- In Stock ：
- 13,041
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Polarity :
- PNP
- Continuous Collector Current :
- -500mA
- Pin Count :
- 3
- Max Power Dissipation :
- 625mW
- Voltage - Rated DC :
- -30V
- Collector Base Voltage (VCBO) :
- 30V
- Transistor Type :
- PNP - Darlington
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- Power Dissipation :
- 625mW
- RoHS Status :
- RoHS Compliant
- JESD-609 Code :
- e1
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 30V
- Max Breakdown Voltage :
- 30V
- Operating Temperature :
- -55°C~150°C TJ
- Base Part Number :
- MPSA63
- Number of Elements :
- 1
- Mount :
- Through Hole
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 16 hours ago)
- Current Rating :
- -500mA
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- BOTTOM
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- 1.5V
- Max Collector Current :
- 500mA
- ECCN Code :
- EAR99
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Emitter Base Voltage (VEBO) :
- 10V
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- Number of Pins :
- 3
- Frequency - Transition :
- 125MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Transition Frequency :
- 125MHz
- Transistor Application :
- SWITCHING
- Collector Emitter Breakdown Voltage :
- 30V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Peak Reflow Temperature (Cel) :
- 260
- Lead Free :
- Lead Free
- Published :
- 2007
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Datasheets
- MPSA63RLRAG
PNP - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
MPSA63RLRAG Overview
DC current gain in this device equals 10000 @ 100mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 1.5V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 100μA, 100mA.Single BJT transistor is essential to maintain the continuous collector voltage at -500mA to achieve high efficiency.An emitter's base voltage can be kept at 10V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -500mA current rating.As a result, the part has a transition frequency of 125MHz.Breakdown input voltage is 30V volts.In extreme cases, the collector current can be as low as 500mA volts.
MPSA63RLRAG Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 125MHz
MPSA63RLRAG Applications
There are a lot of ON Semiconductor
MPSA63RLRAG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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