MMBTA92,215
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- Mfr.Part #
- MMBTA92,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 300V 0.1A TO236AB
- Stock
- 466,133
- In Stock ：
- 466,133
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 250mW
- Radiation Hardening :
- No
- Operating Temperature :
- 150°C TJ
- Frequency :
- 50MHz
- Collector Emitter Voltage (VCEO) :
- 300V
- Collector Base Voltage (VCBO) :
- 300V
- Pin Count :
- 3
- REACH SVHC :
- No SVHC
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 250nA ICBO
- Transistor Type :
- PNP
- Transition Frequency :
- 50MHz
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Terminal Position :
- Dual
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- MMBTA92
- Emitter Base Voltage (VEBO) :
- 5V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Packaging :
- Tape and Reel (TR)
- Max Breakdown Voltage :
- 300V
- Series :
- Automotive, AEC-Q101
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Contact Plating :
- Tin
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 250mW
- Gain Bandwidth Product :
- 50MHz
- Mount :
- Surface Mount
- Max Collector Current :
- 100mA
- Collector Emitter Breakdown Voltage :
- 300V
- Factory Lead Time :
- 4 Weeks
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Polarity/Channel Type :
- PNP
- Published :
- 2000
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 30mA 10V
- Terminal Form :
- Gull wing
- Datasheets
- MMBTA92,215
PNP 150°C TJ 250nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBTA92,215 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 25 @ 30mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 2mA, 20mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 50MHz.Single BJT transistor can take a breakdown input voltage of 300V volts.During maximum operation, collector current can be as low as 100mA volts.
MMBTA92,215 Features
the DC current gain for this device is 25 @ 30mA 10V
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
a transition frequency of 50MHz
MMBTA92,215 Applications
There are a lot of Nexperia USA Inc.
MMBTA92,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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