MMBTA64-7-F
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- Mfr.Part #
- MMBTA64-7-F
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 30V 0.5A SOT23-3
- Stock
- 852
- In Stock ：
- 852
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power - Max :
- 300mW
- Max Collector Current :
- 500mA
- Frequency - Transition :
- 125MHz
- Pin Count :
- 3
- Collector Emitter Saturation Voltage :
- 1.5V
- Collector Emitter Breakdown Voltage :
- 30V
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 30V
- Transistor Type :
- PNP - Darlington
- hFE Min :
- 10000
- Pbfree Code :
- yes
- Transition Frequency :
- 125MHz
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- Current Rating :
- -500mA
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20000 @ 100mA 5V
- Polarity :
- PNP
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 3
- Factory Lead Time :
- 19 Weeks
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Published :
- 2008
- Terminal Form :
- Gull wing
- Radiation Hardening :
- No
- Series :
- Automotive, AEC-Q101
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Voltage - Rated DC :
- -30V
- Terminal Position :
- Dual
- Emitter Base Voltage (VEBO) :
- 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Mount :
- Surface Mount
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 30V
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Height :
- 1mm
- Base Part Number :
- MMBTA64
- Transistor Application :
- SWITCHING
- Length :
- 3.05mm
- Width :
- 1.4mm
- Operating Temperature :
- -55°C~150°C TJ
- Weight :
- 7.994566mg
- Collector Base Voltage (VCBO) :
- 30V
- Max Power Dissipation :
- 300mW
- Terminal Finish :
- Matte Tin (Sn)
- Datasheets
- MMBTA64-7-F
PNP - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBTA64-7-F Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20000 @ 100mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 100μA, 100mA.The emitter base voltage can be kept at 10V for high efficiency.The current rating of this fuse is -500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 125MHz.The breakdown input voltage is 30V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
MMBTA64-7-F Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 125MHz
MMBTA64-7-F Applications
There are a lot of Diodes Incorporated
MMBTA64-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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