MMBTA63

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Package / Case :

TO-236-3, SC-59, SOT-23-3

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 100µA, 100mA

Collector Emitter Breakdown Voltage :

30V

Pbfree Code :

yes

Height :

1mm

Polarity :

PNP

JESD-609 Code :

e3

Number of Elements :

1

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Pin Count :

3

Transistor Element Material :

SILICON

Factory Lead Time :

19 Weeks

Mount :

Surface Mount

ECCN Code :

EAR99

Collector Emitter Voltage (VCEO) :

30V

Power - Max :

300mW

Max Power Dissipation :

300mW

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Series :

Automotive, AEC-Q101

Max Breakdown Voltage :

30V

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

40

Base Part Number :

MMBTA63

Collector Base Voltage (VCBO) :

30V

Published :

2008

Terminal Finish :

Matte Tin (Sn)

Transistor Type :

PNP - Darlington

Voltage - Rated DC :

-30V

Weight :

7.994566mg

Number of Terminations :

3

Collector Emitter Saturation Voltage :

1.5V

Max Collector Current :

500mA

Transition Frequency :

125MHz

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Current Rating :

-500mA

Emitter Base Voltage (VEBO) :

10V

Length :

3.05mm

hFE Min :

5000

Width :

1.4mm

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Frequency - Transition :

125MHz

Current - Collector Cutoff (Max) :

100nA ICBO

DC Current Gain (hFE) (Min) @ Ic, Vce :

10000 @ 100mA 5V

Element Configuration :

Single

Number of Pins :

3