MMBTA56LT1G-HFE
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- Mfr.Part #
- MMBTA56LT1G-HFE
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 0.5A SOT23-3
- Stock
- 11,387
- In Stock ：
- 11,387
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector (Ic) (Max) :
- 500mA
- Published :
- 2011
- RoHS Status :
- ROHS3 Compliant
- Voltage - Collector Emitter Breakdown (Max) :
- 80V
- Packaging :
- Tape and Reel (TR)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Operating Temperature :
- -55°C~150°C TJ
- Power - Max :
- 225mW
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Frequency - Transition :
- 50MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Factory Lead Time :
- 4 Weeks
- Transistor Type :
- PNP
- Datasheets
- MMBTA56LT1G-HFE
PNP -55°C~150°C TJ 100nA ICBO TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBTA56LT1G-HFE Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 10mA, 100mA.This device displays a 80V maximum voltage - Collector Emitter Breakdown.
MMBTA56LT1G-HFE Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
MMBTA56LT1G-HFE Applications
There are a lot of ON Semiconductor
MMBTA56LT1G-HFE applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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