MMBTA56LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Current Rating :

-500mA

Collector Emitter Voltage (VCEO) :

80V

Terminal Position :

Dual

Collector Emitter Saturation Voltage :

-250mV

Published :

2006

Operating Temperature :

-55°C~150°C TJ

Frequency :

50MHz

Factory Lead Time :

4 Weeks

Element Configuration :

Single

Number of Pins :

3

Gain Bandwidth Product :

50MHz

Number of Elements :

1

Length :

3.0226mm

Collector Base Voltage (VCBO) :

80V

Packaging :

Tape and Reel (TR)

Contact Plating :

Tin

Max Collector Current :

500mA

Peak Reflow Temperature (Cel) :

260

Base Part Number :

MMBTA56

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Polarity/Channel Type :

PNP

Lead Free :

Lead Free

Vce Saturation (Max) @ Ib, Ic :

250mV @ 10mA, 100mA

Pin Count :

3

Height :

1.016mm

Transistor Application :

AMPLIFIER

Transition Frequency :

50MHz

REACH SVHC :

No SVHC

Max Breakdown Voltage :

80V

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

40

Emitter Base Voltage (VEBO) :

4V

Surface Mount :

yes

Radiation Hardening :

No

Current - Collector Cutoff (Max) :

100nA ICBO

Terminal Form :

Gull wing

Number of Terminations :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 100mA 1V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Pbfree Code :

yes

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

-80V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Voltage - Rated DC :

-80V

Max Power Dissipation :

225mW

Transistor Type :

PNP

Power - Max :

225mW

Power Dissipation :

300mW

Width :

1.397mm

hFE Min :

100