MMBTA56-7
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- Mfr.Part #
- MMBTA56-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 0.5A SOT23-3
- Stock
- 4,802
- In Stock ：
- 4,802
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- Voltage - Rated DC :
- -80V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Base Part Number :
- MMBTA56
- Continuous Collector Current :
- -500mA
- Width :
- 1.4mm
- Number of Pins :
- 3
- Max Collector Current :
- 500mA
- Published :
- 2008
- Collector Emitter Voltage (VCEO) :
- 80V
- Frequency :
- 50MHz
- Emitter Base Voltage (VEBO) :
- 4V
- Collector Emitter Breakdown Voltage :
- 80V
- Pin Count :
- 3
- Series :
- Automotive, AEC-Q101
- Mount :
- Surface Mount
- Length :
- 3.05mm
- Transistor Type :
- PNP
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Mounting Type :
- Surface Mount
- Gain Bandwidth Product :
- 50MHz
- Max Power Dissipation :
- 300mW
- Height :
- 1mm
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- 80V
- Contact Plating :
- Tin
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 80V
- hFE Min :
- 100
- Factory Lead Time :
- 19 Weeks
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Power Dissipation :
- 300mW
- Transition Frequency :
- 50MHz
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Current Rating :
- -100mA
- Additional Feature :
- High Reliability
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- 260
- Pbfree Code :
- yes
- Polarity/Channel Type :
- PNP
- Weight :
- 7.994566mg
- Collector Emitter Saturation Voltage :
- -250mV
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Lead Free :
- Lead Free
- Datasheets
- MMBTA56-7
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBTA56-7-F Overview
In this device, the DC current gain is 100 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -250mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 10mA, 100mA.Maintaining the continuous collector voltage at -500mA is essential for high efficiency.Keeping the emitter base voltage at 4V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-100mA).50MHz is present in the transition frequency.An input voltage of 80V volts is the breakdown voltage.Maximum collector currents can be below 500mA volts.
MMBTA56-7-F Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is -100mA
a transition frequency of 50MHz
MMBTA56-7-F Applications
There are a lot of Diodes Incorporated
MMBTA56-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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