MMBTA55-7
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- Mfr.Part #
- MMBTA55-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.5A SOT23-3
- Stock
- 56,554
- In Stock ：
- 56,554
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 60V
- Polarity/Channel Type :
- PNP
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Frequency :
- 50MHz
- ECCN Code :
- EAR99
- Continuous Collector Current :
- -500mA
- Operating Temperature :
- -55°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Collector Current :
- 500mA
- Lead Free :
- Lead Free
- Terminal Finish :
- Matte Tin (Sn)
- Published :
- 2008
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- PNP
- Current Rating :
- -100mA
- Number of Elements :
- 1
- Voltage - Rated DC :
- -60V
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- hFE Min :
- 100
- Power Dissipation :
- 300mW
- Collector Emitter Saturation Voltage :
- -250mV
- Length :
- 3.05mm
- Terminal Position :
- Dual
- Width :
- 1.4mm
- Number of Pins :
- 3
- Height :
- 1mm
- Base Part Number :
- MMBTA55
- Emitter Base Voltage (VEBO) :
- -4V
- Max Breakdown Voltage :
- 60V
- Mount :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 60V
- Factory Lead Time :
- 19 Weeks
- Pbfree Code :
- yes
- Pin Count :
- 3
- Transition Frequency :
- 50MHz
- Terminal Form :
- Gull wing
- Weight :
- 7.994566mg
- Transistor Application :
- SWITCHING
- Gain Bandwidth Product :
- 50MHz
- REACH SVHC :
- No SVHC
- Max Power Dissipation :
- 300mW
- Series :
- Automotive, AEC-Q101
- Additional Feature :
- High Reliability
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Collector Emitter Breakdown Voltage :
- 60V
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Datasheets
- MMBTA55-7
MMBTA55-7 Documents
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBTA55-7-F Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of -250mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at -500mA.Keeping the emitter base voltage at -4V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 50MHz in the part.Single BJT transistor can be broken down at a voltage of 60V volts.When collector current reaches its maximum, it can reach 500mA volts.
MMBTA55-7-F Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at -4V
the current rating of this device is -100mA
a transition frequency of 50MHz
MMBTA55-7-F Applications
There are a lot of Diodes Incorporated
MMBTA55-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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