MMBTA55-7
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- Mfr.Part #
- MMBTA55-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.5A SOT23-3
- Stock
- 56,554
- In Stock ：
- 56,554
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- 260
- Polarity/Channel Type :
- PNP
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 300mW
- Collector Emitter Voltage (VCEO) :
- 60V
- ECCN Code :
- EAR99
- Length :
- 3.05mm
- Transistor Type :
- PNP
- Terminal Form :
- Gull wing
- Packaging :
- Tape and Reel (TR)
- Max Breakdown Voltage :
- 60V
- Published :
- 2008
- Collector Emitter Breakdown Voltage :
- 60V
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- -4V
- Gain Bandwidth Product :
- 50MHz
- Operating Temperature :
- -55°C~150°C TJ
- Width :
- 1.4mm
- Pbfree Code :
- yes
- hFE Min :
- 100
- Current Rating :
- -100mA
- Height :
- 1mm
- Voltage - Rated DC :
- -60V
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- Additional Feature :
- High Reliability
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Elements :
- 1
- Base Part Number :
- MMBTA55
- Series :
- Automotive, AEC-Q101
- Lead Free :
- Lead Free
- Factory Lead Time :
- 19 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- REACH SVHC :
- No SVHC
- Terminal Finish :
- Matte Tin (Sn)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pin Count :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Continuous Collector Current :
- -500mA
- Max Collector Current :
- 500mA
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- -250mV
- Collector Base Voltage (VCBO) :
- 60V
- Transition Frequency :
- 50MHz
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Weight :
- 7.994566mg
- Frequency :
- 50MHz
- Max Power Dissipation :
- 300mW
- Datasheets
- MMBTA55-7
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBTA55-7-F Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of -250mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at -500mA.Keeping the emitter base voltage at -4V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 50MHz in the part.Single BJT transistor can be broken down at a voltage of 60V volts.When collector current reaches its maximum, it can reach 500mA volts.
MMBTA55-7-F Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at -4V
the current rating of this device is -100mA
a transition frequency of 50MHz
MMBTA55-7-F Applications
There are a lot of Diodes Incorporated
MMBTA55-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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