MMBTA42LT3
- Mfr.Part #
- MMBTA42LT3
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.5A SOT23-3
- Stock
- 18,185
- In Stock :
- 18,185
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 300mW
- Terminal Form :
- Gull wing
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- MMBTA42
- Max Collector Current :
- 500mA
- Emitter Base Voltage (VEBO) :
- 6V
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 25
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Lifecycle Status :
- ACTIVE (Last Updated: 10 hours ago)
- Current Rating :
- 500mA
- Factory Lead Time :
- 8 Weeks
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 300V
- Transistor Element Material :
- SILICON
- Surface Mount :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 30mA 10V
- Pin Count :
- 3
- Gain Bandwidth Product :
- 50MHz
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 300V
- Published :
- 2008
- Collector Emitter Saturation Voltage :
- 500mV
- Collector Emitter Voltage (VCEO) :
- 300V
- Contact Plating :
- Tin
- Frequency :
- 50MHz
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 300V
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Position :
- Dual
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Peak Reflow Temperature (Cel) :
- 260
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Voltage - Rated DC :
- 300V
- Operating Temperature :
- -55°C~150°C TJ
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transition Frequency :
- 50MHz
- Max Power Dissipation :
- 225mW
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Datasheets
- MMBTA42LT3

NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBTA42LT3G Overview
DC current gain in this device equals 40 @ 30mA 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 500mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 2mA, 20mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 500mA current rating.As a result, the part has a transition frequency of 50MHz.Breakdown input voltage is 300V volts.In extreme cases, the collector current can be as low as 500mA volts.
MMBTA42LT3G Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz
MMBTA42LT3G Applications
There are a lot of ON Semiconductor
MMBTA42LT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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