MMBTA42
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- Mfr.Part #
- MMBTA42
- Manufacturer
- Diotec Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.5A SOT23-3
- Stock
- 46,951
- In Stock ：
- 46,951
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- Manufacturer :
- Diotec Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Pin Count :
- 3
- Number of Pins :
- 3
- Transistor Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Gain Bandwidth Product :
- 50MHz
- Packaging :
- Tape and Reel (TR)
- Base Part Number :
- MMBTA42
- Collector Base Voltage (VCBO) :
- 300V
- Power Dissipation :
- 300mW
- ECCN Code :
- EAR99
- Termination :
- SMD/SMT
- Factory Lead Time :
- 19 Weeks
- Mounting Type :
- Surface Mount
- Max Junction Temperature (Tj) :
- 150°C
- Collector Emitter Breakdown Voltage :
- 300V
- Width :
- 1.4mm
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Form :
- Gull wing
- Weight :
- 7.994566mg
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Additional Feature :
- High Reliability
- Peak Reflow Temperature (Cel) :
- 260
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Height :
- 1.1mm
- Series :
- Automotive, AEC-Q101
- Voltage - Rated DC :
- 300V
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 30mA 10V
- Max Breakdown Voltage :
- 300V
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2008
- Collector Emitter Voltage (VCEO) :
- 300V
- REACH SVHC :
- No SVHC
- Continuous Collector Current :
- 500mA
- Terminal Finish :
- Matte Tin (Sn)
- Length :
- 3.05mm
- Emitter Base Voltage (VEBO) :
- 6V
- Mount :
- Surface Mount
- JESD-609 Code :
- e3
- hFE Min :
- 25
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Max Power Dissipation :
- 300mW
- Transistor Application :
- SWITCHING
- Frequency :
- 50MHz
- Polarity/Channel Type :
- NPN
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 50MHz
- Current Rating :
- 200mA
- Collector Emitter Saturation Voltage :
- 500mV
- Number of Terminations :
- 3
- Max Collector Current :
- 500mA
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Datasheets
- MMBTA42
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBTA42-7-F Overview
In this device, the DC current gain is 40 @ 30mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 2mA, 20mA.A 500mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 200mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Input voltage breakdown is available at 300V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MMBTA42-7-F Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 50MHz
MMBTA42-7-F Applications
There are a lot of Diodes Incorporated
MMBTA42-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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