MMBTA42
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- Mfr.Part #
- MMBTA42
- Manufacturer
- Diotec Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.5A SOT23-3
- Stock
- 46,951
- In Stock ：
- 46,951
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- Manufacturer :
- Diotec Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Current Rating :
- 200mA
- Collector Emitter Breakdown Voltage :
- 300V
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Continuous Collector Current :
- 500mA
- Polarity/Channel Type :
- NPN
- Height :
- 1.1mm
- Number of Elements :
- 1
- hFE Min :
- 25
- Series :
- Automotive, AEC-Q101
- Gain Bandwidth Product :
- 50MHz
- Width :
- 1.4mm
- Power Dissipation :
- 300mW
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Base Part Number :
- MMBTA42
- Voltage - Rated DC :
- 300V
- Pin Count :
- 3
- REACH SVHC :
- No SVHC
- Weight :
- 7.994566mg
- Max Breakdown Voltage :
- 300V
- Terminal Position :
- Dual
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Radiation Hardening :
- No
- Transition Frequency :
- 50MHz
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 30mA 10V
- Collector Base Voltage (VCBO) :
- 300V
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Emitter Base Voltage (VEBO) :
- 6V
- Mount :
- Surface Mount
- Collector Emitter Saturation Voltage :
- 500mV
- Max Power Dissipation :
- 300mW
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Matte Tin (Sn)
- Max Collector Current :
- 500mA
- Additional Feature :
- High Reliability
- Termination :
- SMD/SMT
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Published :
- 2008
- Pbfree Code :
- yes
- Length :
- 3.05mm
- Transistor Type :
- NPN
- Max Junction Temperature (Tj) :
- 150°C
- Frequency :
- 50MHz
- Collector Emitter Voltage (VCEO) :
- 300V
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Factory Lead Time :
- 19 Weeks
- Datasheets
- MMBTA42
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBTA42-7-F Overview
In this device, the DC current gain is 40 @ 30mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 2mA, 20mA.A 500mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 200mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Input voltage breakdown is available at 300V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MMBTA42-7-F Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 50MHz
MMBTA42-7-F Applications
There are a lot of Diodes Incorporated
MMBTA42-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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