MMBTA42
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- Mfr.Part #
- MMBTA42
- Manufacturer
- YANGJIE
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- SOT-23 NPN 0.35W 0.5A 300V Trans
- Stock
- 46,742
- In Stock ：
- 46,742
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- Manufacturer :
- YANGJIE
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Collector Current :
- 500mA
- hFE Min :
- 25
- Collector Emitter Breakdown Voltage :
- 300V
- Continuous Collector Current :
- 500mA
- Terminal Finish :
- Matte Tin (Sn)
- Collector Emitter Voltage (VCEO) :
- 300V
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 3
- Power Dissipation :
- 300mW
- Width :
- 1.4mm
- Pbfree Code :
- yes
- Length :
- 3.05mm
- Current Rating :
- 200mA
- Published :
- 2008
- Termination :
- SMD/SMT
- Gain Bandwidth Product :
- 50MHz
- Lead Free :
- Lead Free
- Transition Frequency :
- 50MHz
- Peak Reflow Temperature (Cel) :
- 260
- Collector Base Voltage (VCBO) :
- 300V
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 30mA 10V
- Factory Lead Time :
- 19 Weeks
- Terminal Position :
- Dual
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Saturation Voltage :
- 500mV
- Series :
- Automotive, AEC-Q101
- Base Part Number :
- MMBTA42
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Voltage - Rated DC :
- 300V
- Max Power Dissipation :
- 300mW
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- NPN
- Additional Feature :
- High Reliability
- Mounting Type :
- Surface Mount
- Pin Count :
- 3
- Height :
- 1.1mm
- Transistor Type :
- NPN
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Junction Temperature (Tj) :
- 150°C
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 6V
- Frequency :
- 50MHz
- Max Breakdown Voltage :
- 300V
- Weight :
- 7.994566mg
- Datasheets
- MMBTA42
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBTA42-7-F Overview
In this device, the DC current gain is 40 @ 30mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 2mA, 20mA.A 500mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 200mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Input voltage breakdown is available at 300V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MMBTA42-7-F Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 50MHz
MMBTA42-7-F Applications
There are a lot of Diodes Incorporated
MMBTA42-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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