MMBTA13LT1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector Cutoff (Max) :

100nA ICBO

Collector Emitter Voltage (VCEO) :

30V

Number of Pins :

3

Lead Free :

Lead Free

Max Power Dissipation :

225mW

Contact Plating :

Tin

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Emitter Base Voltage (VEBO) :

10V

Collector Emitter Saturation Voltage :

1.5V

Width :

1.3mm

hFE Min :

5000

Max Breakdown Voltage :

30V

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

Current Rating :

300mA

JESD-609 Code :

e3

Factory Lead Time :

11 Weeks

Terminal Form :

Gull wing

Pin Count :

3

Element Configuration :

Single

Number of Elements :

1

Power Dissipation :

225mW

Transistor Type :

NPN - Darlington

Polarity :

NPN

Length :

2.9mm

Voltage - Rated DC :

30V

Surface Mount :

yes

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Radiation Hardening :

No

Frequency - Transition :

125MHz

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 100µA, 100mA

Number of Terminations :

3

Halogen Free :

Halogen Free

Package / Case :

TO-236-3, SC-59, SOT-23-3

Height :

940μm

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Base Part Number :

MMBTA13

Transition Frequency :

125MHz

Continuous Collector Current :

300mA

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Transistor Application :

AMPLIFIER

Collector Emitter Breakdown Voltage :

30V

DC Current Gain (hFE) (Min) @ Ic, Vce :

10000 @ 100mA 5V

Weight :

1.437803g

Collector Base Voltage (VCBO) :

30V

Max Collector Current :

300mA

Published :

1997