MMBTA13_D87Z
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- Mfr.Part #
- MMBTA13_D87Z
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 30V 1.2A SOT23-3
- Stock
- 10,645
- In Stock ：
- 10,645
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -55°C~150°C TJ
- Power - Max :
- 350mW
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Supplier Device Package :
- SOT-23-3
- Current - Collector (Ic) (Max) :
- 1.2A
- Packaging :
- Tape and Reel (TR)
- Frequency - Transition :
- 125MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Base Part Number :
- MMBTA13
- Transistor Type :
- NPN - Darlington
- Voltage - Collector Emitter Breakdown (Max) :
- 30V
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- Datasheets
- MMBTA13_D87Z
NPN - Darlington -55°C~150°C TJ 100nA ICBO TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBTA13_D87Z Overview
In this device, the DC current gain is 10000 @ 100mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 100μA, 100mA.Product comes in the supplier's device package SOT-23-3.There is a 30V maximal voltage in the device due to collector-emitter breakdown.
MMBTA13_D87Z Features
the DC current gain for this device is 10000 @ 100mA 5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the supplier device package of SOT-23-3
MMBTA13_D87Z Applications
There are a lot of ON Semiconductor
MMBTA13_D87Z applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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