MMBTA06LT1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

JESD-609 Code :

e3

hFE Min :

100

Polarity/Channel Type :

NPN

Power Dissipation :

300mW

Number of Pins :

3

Lead Free :

Lead Free

Published :

2005

Radiation Hardening :

No

Pbfree Code :

yes

Max Power Dissipation :

225mW

Current - Collector Cutoff (Max) :

100nA

Mounting Type :

Surface Mount

Collector Emitter Voltage (VCEO) :

80V

Time@Peak Reflow Temperature-Max (s) :

40

Emitter Base Voltage (VEBO) :

4V

Terminal Position :

Dual

Number of Terminations :

3

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 100mA 1V

Width :

1.397mm

Terminal Form :

Gull wing

Collector Emitter Saturation Voltage :

250mV

Voltage - Rated DC :

80V

Collector Emitter Breakdown Voltage :

80V

Height :

1.016mm

Frequency :

100MHz

Operating Temperature :

-55°C~150°C TJ

Max Breakdown Voltage :

80V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Transition Frequency :

100MHz

Vce Saturation (Max) @ Ib, Ic :

250mV @ 10mA, 100mA

Max Collector Current :

500mA

ECCN Code :

EAR99

Gain Bandwidth Product :

100MHz

Current Rating :

500mA

Transistor Type :

NPN

Contact Plating :

Tin

Package / Case :

TO-236-3, SC-59, SOT-23-3

Transistor Application :

AMPLIFIER

RoHS Status :

ROHS3 Compliant

Length :

3.0226mm

Pin Count :

3

REACH SVHC :

No SVHC

Surface Mount :

yes

Collector Base Voltage (VCBO) :

80V

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

MMBTA06

Element Configuration :

Single

Factory Lead Time :

4 Weeks