MMBTA06-7-F
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- Mfr.Part #
- MMBTA06-7-F
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A SOT23-3
- Stock
- 5,497
- In Stock ：
- 5,497
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Base Voltage (VCBO) :
- 80V
- Max Junction Temperature (Tj) :
- 150°C
- Polarity/Channel Type :
- NPN
- Weight :
- 7.994566mg
- Frequency :
- 100MHz
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Transition Frequency :
- 100MHz
- Additional Feature :
- High Reliability
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- 250mV
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Max Collector Current :
- 500mA
- Element Configuration :
- Single
- Published :
- 2009
- Width :
- 1.4mm
- Termination :
- SMD/SMT
- Terminal Position :
- Dual
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Power Dissipation :
- 300mW
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- hFE Min :
- 100
- Factory Lead Time :
- 15 Weeks
- Series :
- Automotive, AEC-Q101
- Power Dissipation :
- 310mW
- Mount :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Height :
- 1.1mm
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Transistor Type :
- NPN
- Max Breakdown Voltage :
- 80V
- Gain Bandwidth Product :
- 100MHz
- Continuous Collector Current :
- 500mA
- Length :
- 3.05mm
- Emitter Base Voltage (VEBO) :
- 4V
- REACH SVHC :
- No SVHC
- Current - Collector Cutoff (Max) :
- 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Collector Emitter Breakdown Voltage :
- 80V
- Current Rating :
- 500mA
- Base Part Number :
- MMBTA06
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Contact Plating :
- Tin
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 80V
- Collector Emitter Voltage (VCEO) :
- 80V
- Datasheets
- MMBTA06-7-F
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBTA06-7-F Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of 250mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 500mA.Keeping the emitter base voltage at 4V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 80V volts.When collector current reaches its maximum, it can reach 500mA volts.
MMBTA06-7-F Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
MMBTA06-7-F Applications
There are a lot of Diodes Incorporated
MMBTA06-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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