MMBTA05LT3G
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- Mfr.Part #
- MMBTA05LT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.5A SOT23-3
- Stock
- 10,255
- In Stock ：
- 10,255
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Surface Mount :
- yes
- Collector Emitter Breakdown Voltage :
- 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- hFE Min :
- 100
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Current Rating :
- 500mA
- Transistor Type :
- NPN
- Number of Pins :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Factory Lead Time :
- 4 Weeks
- Base Part Number :
- MMBTA05
- Terminal Finish :
- Tin (Sn)
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Transition Frequency :
- 100MHz
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 60V
- Max Power Dissipation :
- 225mW
- Emitter Base Voltage (VEBO) :
- 4V
- Polarity/Channel Type :
- NPN
- Transistor Element Material :
- SILICON
- Frequency :
- 100MHz
- Max Breakdown Voltage :
- 60V
- Transistor Application :
- AMPLIFIER
- Pbfree Code :
- yes
- Collector Emitter Saturation Voltage :
- 250mV
- RoHS Status :
- ROHS3 Compliant
- Width :
- 2.64mm
- Length :
- 3.04mm
- Collector Base Voltage (VCBO) :
- 60V
- Max Collector Current :
- 500mA
- Height :
- 1.11mm
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Packaging :
- Tape and Reel (TR)
- Voltage - Rated DC :
- 60V
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Radiation Hardening :
- No
- Published :
- 2007
- Current - Collector Cutoff (Max) :
- 100nA
- Gain Bandwidth Product :
- 100MHz
- Number of Terminations :
- 3
- Pin Count :
- 3
- Power Dissipation :
- 300mW
- Datasheets
- MMBTA05LT3G
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBTA05LT3G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 250mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 10mA, 100mA.The emitter base voltage can be kept at 4V for high efficiency.The current rating of this fuse is 500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 100MHz.The breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
MMBTA05LT3G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
MMBTA05LT3G Applications
There are a lot of ON Semiconductor
MMBTA05LT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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