MMBTA05LT3G
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- Mfr.Part #
- MMBTA05LT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.5A SOT23-3
- Stock
- 10,255
- In Stock ：
- 10,255
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 4V
- Height :
- 1.11mm
- Base Part Number :
- MMBTA05
- Current - Collector Cutoff (Max) :
- 100nA
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Pin Count :
- 3
- Voltage - Rated DC :
- 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Voltage (VCEO) :
- 60V
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Application :
- AMPLIFIER
- Collector Emitter Saturation Voltage :
- 250mV
- Transistor Element Material :
- SILICON
- Width :
- 2.64mm
- Length :
- 3.04mm
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- Gain Bandwidth Product :
- 100MHz
- Pbfree Code :
- yes
- Surface Mount :
- yes
- Collector Base Voltage (VCBO) :
- 60V
- Polarity/Channel Type :
- NPN
- Max Power Dissipation :
- 225mW
- Terminal Position :
- Dual
- Max Collector Current :
- 500mA
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Published :
- 2007
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 60V
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 4 Weeks
- hFE Min :
- 100
- Power Dissipation :
- 300mW
- Frequency :
- 100MHz
- Max Breakdown Voltage :
- 60V
- Packaging :
- Tape and Reel (TR)
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Current Rating :
- 500mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Transistor Type :
- NPN
- Transition Frequency :
- 100MHz
- Datasheets
- MMBTA05LT3G
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBTA05LT3G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 250mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 10mA, 100mA.The emitter base voltage can be kept at 4V for high efficiency.The current rating of this fuse is 500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 100MHz.The breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
MMBTA05LT3G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
MMBTA05LT3G Applications
There are a lot of ON Semiconductor
MMBTA05LT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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