MMBTA05LT3G
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- Mfr.Part #
- MMBTA05LT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.5A SOT23-3
- Stock
- 43,797
- In Stock ：
- 43,797
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Current - Collector Cutoff (Max) :
- 100nA
- Gain Bandwidth Product :
- 100MHz
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Height :
- 1.11mm
- Transistor Application :
- AMPLIFIER
- Width :
- 2.64mm
- Number of Pins :
- 3
- Length :
- 3.04mm
- Published :
- 2007
- Emitter Base Voltage (VEBO) :
- 4V
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Surface Mount :
- yes
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Base Part Number :
- MMBTA05
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Max Power Dissipation :
- 225mW
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Transition Frequency :
- 100MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Terminal Form :
- Gull wing
- Max Collector Current :
- 500mA
- Terminal Position :
- Dual
- Polarity/Channel Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Breakdown Voltage :
- 60V
- Voltage - Rated DC :
- 60V
- Frequency :
- 100MHz
- Number of Terminations :
- 3
- Power Dissipation :
- 300mW
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 60V
- Terminal Finish :
- Tin (Sn)
- hFE Min :
- 100
- Lead Free :
- Lead Free
- Pin Count :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 4 Weeks
- Collector Base Voltage (VCBO) :
- 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Max Breakdown Voltage :
- 60V
- Current Rating :
- 500mA
- Collector Emitter Saturation Voltage :
- 250mV
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Datasheets
- MMBTA05LT3G
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBTA05LT3G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 250mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 10mA, 100mA.The emitter base voltage can be kept at 4V for high efficiency.The current rating of this fuse is 500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 100MHz.The breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
MMBTA05LT3G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
MMBTA05LT3G Applications
There are a lot of ON Semiconductor
MMBTA05LT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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