MMBTA05LT3
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- Mfr.Part #
- MMBTA05LT3
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.5A SOT23-3
- Stock
- 42,396
- In Stock ：
- 42,396
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- Base Part Number :
- MMBTA05
- Pin Count :
- 3
- Collector Emitter Saturation Voltage :
- 250mV
- Collector Emitter Voltage (VCEO) :
- 60V
- Voltage - Rated DC :
- 60V
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Form :
- Gull wing
- Length :
- 3.04mm
- Width :
- 2.64mm
- Number of Elements :
- 1
- Factory Lead Time :
- 4 Weeks
- hFE Min :
- 100
- Transition Frequency :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Terminal Position :
- Dual
- ECCN Code :
- EAR99
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Polarity/Channel Type :
- NPN
- Height :
- 1.11mm
- Transistor Type :
- NPN
- Collector Base Voltage (VCBO) :
- 60V
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 500mA
- Lead Free :
- Lead Free
- Gain Bandwidth Product :
- 100MHz
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 500mA
- Published :
- 2007
- Power Dissipation :
- 300mW
- Transistor Application :
- AMPLIFIER
- Collector Emitter Breakdown Voltage :
- 60V
- Current - Collector Cutoff (Max) :
- 100nA
- Frequency :
- 100MHz
- Surface Mount :
- yes
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Breakdown Voltage :
- 60V
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 4V
- Pbfree Code :
- yes
- Max Power Dissipation :
- 225mW
- Element Configuration :
- Single
- Terminal Finish :
- Tin (Sn)
- Transistor Element Material :
- SILICON
- Datasheets
- MMBTA05LT3
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBTA05LT3G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 250mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 10mA, 100mA.The emitter base voltage can be kept at 4V for high efficiency.The current rating of this fuse is 500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 100MHz.The breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
MMBTA05LT3G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
MMBTA05LT3G Applications
There are a lot of ON Semiconductor
MMBTA05LT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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