MMBT6521LT1G
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- Mfr.Part #
- MMBT6521LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 25V 0.1A SOT23-3
- Stock
- 9
- In Stock ：
- 9
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 25V
- Terminal Position :
- Dual
- Polarity/Channel Type :
- NPN
- REACH SVHC :
- Unknown
- Current Rating :
- 100mA
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 300mW
- Factory Lead Time :
- 2 Weeks
- Collector Emitter Saturation Voltage :
- 500mV
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Transistor Application :
- AMPLIFIER
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- Max Power Dissipation :
- 225mW
- Surface Mount :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- hFE Min :
- 150
- Transistor Type :
- NPN
- Max Collector Current :
- 100mA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Published :
- 2006
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Contact Plating :
- Tin
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 4V
- Number of Elements :
- 1
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 2mA 10V
- Collector Emitter Voltage (VCEO) :
- 25V
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 40V
- Number of Pins :
- 3
- Packaging :
- Tape and Reel (TR)
- Voltage - Rated DC :
- 25V
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- MMBT6521LT1G
NPN -55°C~150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT6521LT1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 300 @ 2mA 10V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 5mA, 50mA.If the emitter base voltage is kept at 4V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 100mA.Collector current can be as low as 100mA volts at its maximum.
MMBT6521LT1G Features
the DC current gain for this device is 300 @ 2mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 4V
the current rating of this device is 100mA
MMBT6521LT1G Applications
There are a lot of ON Semiconductor
MMBT6521LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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