MMBT6520LT3G

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Mfr.Part #
MMBT6520LT3G
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS PNP 350V 0.5A SOT23-3
Stock
45,902
In Stock :
45,902

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Current - Collector (Ic) (Max) :
500mA
Qualification Status :
COMMERCIAL
Current - Collector Cutoff (Max) :
50nA ICBO
Time@Peak Reflow Temperature-Max (s) :
40
Package / Case :
TO-236-3, SC-59, SOT-23-3
Operating Temperature :
-55°C~150°C TJ
Transistor Type :
PNP
Terminal Position :
Dual
Configuration :
Single
JESD-609 Code :
e3
JESD-30 Code :
R-PDSO-G3
Number of Elements :
1
Terminal Form :
Gull wing
Mounting Type :
Surface Mount
Packaging :
Tape and Reel (TR)
Transition Frequency :
40MHz
Terminal Finish :
MATTE TIN
Pin Count :
3
Voltage - Collector Emitter Breakdown (Max) :
350V
Power - Max :
225mW
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Element Material :
SILICON
Surface Mount :
yes
Frequency - Transition :
200MHz
Vce Saturation (Max) @ Ib, Ic :
1V @ 5mA, 50mA
Transistor Application :
SWITCHING
JEDEC-95 Code :
TO-236AB
RoHS Status :
ROHS3 Compliant
DC Current Gain (hFE) (Min) @ Ic, Vce :
20 @ 50mA 10V
Peak Reflow Temperature (Cel) :
260
Pbfree Code :
yes
Number of Terminations :
3
Polarity/Channel Type :
PNP
Introducing Transistors - Bipolar (BJT) - Single onsemi MMBT6520LT3G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-236-3, SC-59, SOT-23-3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Terminations:3, MMBT6520LT3G pinout, MMBT6520LT3G datasheet PDF, MMBT6520LT3G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MMBT6520LT3G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MMBT6520LT3G


PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

MMBT6520LT3G Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 50mA 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 5mA, 50mA.A transition frequency of 40MHz is present in the part.A 350V maximal voltage - Collector Emitter Breakdown is present in the device.

MMBT6520LT3G Features


the DC current gain for this device is 20 @ 50mA 10V
the vce saturation(Max) is 1V @ 5mA, 50mA
a transition frequency of 40MHz


MMBT6520LT3G Applications


There are a lot of Rochester Electronics, LLC
MMBT6520LT3G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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