MMBT6517LT3G
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- Mfr.Part #
- MMBT6517LT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 350V 0.1A SOT23-3
- Stock
- 31,899
- In Stock ：
- 31,899
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Transition Frequency :
- 40MHz
- Collector Emitter Saturation Voltage :
- 1V
- Terminal Finish :
- Tin (Sn)
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- NPN
- RoHS Status :
- RoHS Compliant
- Collector Emitter Voltage (VCEO) :
- 350V
- Max Breakdown Voltage :
- 350V
- Peak Reflow Temperature (Cel) :
- 260
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 50mA 10V
- hFE Min :
- 20
- Number of Pins :
- 3
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- 350V
- Max Power Dissipation :
- 225mW
- Current Rating :
- 500mA
- Published :
- 2005
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 300mW
- Gain Bandwidth Product :
- 200MHz
- Max Collector Current :
- 100mA
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 350V
- Operating Temperature :
- -55°C~150°C TJ
- Surface Mount :
- yes
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 7 hours ago)
- Pbfree Code :
- yes
- Terminal Form :
- Gull wing
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Polarity/Channel Type :
- NPN
- Base Part Number :
- MMBT6517
- Collector Base Voltage (VCBO) :
- 350V
- ECCN Code :
- EAR99
- Power - Max :
- 225mW
- Frequency :
- 200MHz
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Position :
- Dual
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 5mA, 50mA
- Pin Count :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Mounting Type :
- Surface Mount
- Datasheets
- MMBT6517LT3G
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT6517LT3G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 50mA 10V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 5mA, 50mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 500mA.A transition frequency of 40MHz is present in the part.There is a breakdown input voltage of 350V volts that it can take.Collector current can be as low as 100mA volts at its maximum.
MMBT6517LT3G Features
the DC current gain for this device is 20 @ 50mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 40MHz
MMBT6517LT3G Applications
There are a lot of ON Semiconductor
MMBT6517LT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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