MMBT6517LT3
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- Mfr.Part #
- MMBT6517LT3
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 350V 0.1A SOT23-3
- Stock
- 12,142
- In Stock ：
- 12,142
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 225mW
- Operating Temperature :
- -55°C~150°C TJ
- Polarity/Channel Type :
- NPN
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 240
- Terminal Form :
- Gull wing
- Published :
- 2001
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- RoHS Status :
- Non-RoHS Compliant
- Collector Emitter Voltage (VCEO) :
- 1V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 50mA 10V
- Qualification Status :
- Not Qualified
- Terminal Position :
- Dual
- Voltage - Rated DC :
- 350V
- JESD-609 Code :
- e0
- Mount :
- Surface Mount
- JESD-30 Code :
- R-PDSO-G3
- Collector Emitter Saturation Voltage :
- 1V
- Current - Collector (Ic) (Max) :
- 100mA
- Collector Emitter Breakdown Voltage :
- 350V
- Collector Base Voltage (VCBO) :
- 350V
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 5mA, 50mA
- Transistor Application :
- SWITCHING
- HTS Code :
- 8541.21.00.95
- Max Collector Current :
- 100mA
- ECCN Code :
- EAR99
- Current Rating :
- 500mA
- Gain Bandwidth Product :
- 200MHz
- Transition Frequency :
- 40MHz
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Lead Free :
- Contains Lead
- Pin Count :
- 3
- JEDEC-95 Code :
- TO-236AB
- Base Part Number :
- MMBT6517
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Reach Compliance Code :
- not_compliant
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Datasheets
- MMBT6517LT3
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT6517LT3 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20 @ 50mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 40MHz.During maximum operation, collector current can be as low as 100mA volts.
MMBT6517LT3 Features
the DC current gain for this device is 20 @ 50mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 40MHz
MMBT6517LT3 Applications
There are a lot of ON Semiconductor
MMBT6517LT3 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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