MMBT6517LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Power - Max :

225mW

Mounting Type :

Surface Mount

Length :

3.04mm

RoHS Status :

RoHS Compliant

Max Collector Current :

100mA

hFE Min :

20

Transistor Element Material :

SILICON

Vce Saturation (Max) @ Ib, Ic :

1V @ 5mA, 50mA

Packaging :

Cut Tape (CT)

Voltage - Rated DC :

350V

Gain Bandwidth Product :

200MHz

Transition Frequency :

40MHz

Collector Emitter Voltage (VCEO) :

350V

Pin Count :

3

Max Power Dissipation :

225mW

Package / Case :

TO-236-3, SC-59, SOT-23-3

Peak Reflow Temperature (Cel) :

260

Frequency :

200MHz

Terminal Form :

Gull wing

Current - Collector Cutoff (Max) :

50nA ICBO

Pbfree Code :

yes

REACH SVHC :

No SVHC

Power Dissipation :

300mW

Transistor Type :

NPN

Surface Mount :

yes

Radiation Hardening :

No

Emitter Base Voltage (VEBO) :

5V

Contact Plating :

Tin

Number of Pins :

3

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Height :

1.11mm

Max Breakdown Voltage :

350V

Lead Free :

Lead Free

Published :

1998

Time@Peak Reflow Temperature-Max (s) :

40

Element Configuration :

Single

Collector Emitter Saturation Voltage :

1V

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 50mA 10V

Polarity/Channel Type :

NPN

Current Rating :

500mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 4 days ago)

Number of Terminations :

3

Collector Base Voltage (VCBO) :

350V

Base Part Number :

MMBT6517

Width :

2.64mm

Number of Elements :

1

Collector Emitter Breakdown Voltage :

350V

ECCN Code :

EAR99

Terminal Position :

Dual

JESD-609 Code :

e3