MMBT6429LT1G
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- Mfr.Part #
- MMBT6429LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.2A SOT23-3
- Stock
- 22,427
- In Stock ：
- 22,427
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current Rating :
- 200mA
- Transistor Application :
- AMPLIFIER
- Published :
- 2004
- Transistor Type :
- NPN
- Number of Terminations :
- 3
- Power Dissipation :
- 300mW
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 225mW
- Height :
- 1.01mm
- Factory Lead Time :
- 4 Weeks
- Pin Count :
- 3
- Max Collector Current :
- 200mA
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e3
- Width :
- 1.4mm
- Frequency :
- 700MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Contact Plating :
- Tin
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- hFE Min :
- 500
- Collector Emitter Voltage (VCEO) :
- 45V
- Lead Free :
- Lead Free
- Length :
- 3.04mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 500 @ 100μA 5V
- Transition Frequency :
- 100MHz
- Polarity/Channel Type :
- NPN
- REACH SVHC :
- No SVHC
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 600mV
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Max Breakdown Voltage :
- 45V
- Halogen Free :
- Halogen Free
- Collector Base Voltage (VCBO) :
- 55V
- Radiation Hardening :
- No
- Voltage - Rated DC :
- 45V
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 45V
- Gain Bandwidth Product :
- 700MHz
- Terminal Form :
- Gull wing
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Position :
- Dual
- Emitter Base Voltage (VEBO) :
- 6V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100nA
- Surface Mount :
- yes
- Base Part Number :
- MMBT6429
- Weight :
- 4.535924g
- Datasheets
- MMBT6429LT1G
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT6429LT1G Overview
This device has a DC current gain of 500 @ 100μA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 600mV.A VCE saturation (Max) of 600mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 200mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 45V volts can be used.A maximum collector current of 200mA volts is possible.
MMBT6429LT1G Features
the DC current gain for this device is 500 @ 100μA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 100MHz
MMBT6429LT1G Applications
There are a lot of ON Semiconductor
MMBT6429LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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