MMBT6429LT1G

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Mfr.Part #
MMBT6429LT1G
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS NPN 45V 0.2A SOT23-3
Stock
22,427
In Stock :
22,427

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Pin Count :
3
Collector Emitter Voltage (VCEO) :
45V
Length :
3.04mm
Lead Free :
Lead Free
Number of Elements :
1
Collector Emitter Breakdown Voltage :
45V
Frequency :
700MHz
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Pins :
3
ECCN Code :
EAR99
Transition Frequency :
100MHz
Emitter Base Voltage (VEBO) :
6V
Base Part Number :
MMBT6429
Time@Peak Reflow Temperature-Max (s) :
40
Power Dissipation :
300mW
Gain Bandwidth Product :
700MHz
hFE Min :
500
Package / Case :
TO-236-3, SC-59, SOT-23-3
Transistor Element Material :
SILICON
Factory Lead Time :
4 Weeks
Peak Reflow Temperature (Cel) :
260
Mounting Type :
Surface Mount
REACH SVHC :
No SVHC
Halogen Free :
Halogen Free
Current - Collector Cutoff (Max) :
100nA
Packaging :
Tape and Reel (TR)
Collector Base Voltage (VCBO) :
55V
DC Current Gain (hFE) (Min) @ Ic, Vce :
500 @ 100μA 5V
Weight :
4.535924g
Collector Emitter Saturation Voltage :
600mV
Height :
1.01mm
Operating Temperature :
-55°C~150°C TJ
Pbfree Code :
yes
Current Rating :
200mA
Voltage - Rated DC :
45V
Radiation Hardening :
No
Transistor Type :
NPN
Width :
1.4mm
Published :
2004
Max Collector Current :
200mA
Polarity/Channel Type :
NPN
Number of Terminations :
3
Vce Saturation (Max) @ Ib, Ic :
600mV @ 5mA, 100mA
Contact Plating :
Tin
Element Configuration :
Single
Max Breakdown Voltage :
45V
Surface Mount :
yes
JESD-609 Code :
e3
RoHS Status :
ROHS3 Compliant
Terminal Position :
Dual
Max Power Dissipation :
225mW
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Terminal Form :
Gull wing
Transistor Application :
AMPLIFIER
Datasheets
MMBT6429LT1G
Introducing Transistors - Bipolar (BJT) - Single onsemi MMBT6429LT1G from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Base Part Number:MMBT6429, Package / Case:TO-236-3, SC-59, SOT-23-3, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, MMBT6429LT1G pinout, MMBT6429LT1G datasheet PDF, MMBT6429LT1G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MMBT6429LT1G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MMBT6429LT1G


NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

MMBT6429LT1G Overview


This device has a DC current gain of 500 @ 100μA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 600mV.A VCE saturation (Max) of 600mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 200mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 45V volts can be used.A maximum collector current of 200mA volts is possible.

MMBT6429LT1G Features


the DC current gain for this device is 500 @ 100μA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 100MHz


MMBT6429LT1G Applications


There are a lot of ON Semiconductor
MMBT6429LT1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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