MMBT6429LT1
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- Mfr.Part #
- MMBT6429LT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS SS NPN 45V LN SOT23
- Stock
- 10,165
- In Stock ：
- 10,165
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 600mV
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- NPN
- Pin Count :
- 3
- Collector Emitter Voltage (VCEO) :
- 45V
- Number of Elements :
- 1
- Base Part Number :
- MMBT6429
- Height :
- 1.01mm
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Radiation Hardening :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Contact Plating :
- Tin
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Halogen Free :
- Halogen Free
- Max Power Dissipation :
- 225mW
- Terminal Position :
- Dual
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2004
- Pbfree Code :
- yes
- Voltage - Rated DC :
- 45V
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 500 @ 100μA 5V
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 6V
- Length :
- 3.04mm
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Max Breakdown Voltage :
- 45V
- Collector Base Voltage (VCBO) :
- 55V
- Current Rating :
- 200mA
- Power Dissipation :
- 300mW
- Transistor Application :
- AMPLIFIER
- Terminal Form :
- Gull wing
- Transition Frequency :
- 100MHz
- Gain Bandwidth Product :
- 700MHz
- REACH SVHC :
- No SVHC
- Surface Mount :
- yes
- Factory Lead Time :
- 4 Weeks
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- Weight :
- 4.535924g
- Max Collector Current :
- 200mA
- Current - Collector Cutoff (Max) :
- 100nA
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 45V
- Transistor Type :
- NPN
- hFE Min :
- 500
- Frequency :
- 700MHz
- Transistor Element Material :
- SILICON
- Width :
- 1.4mm
- Datasheets
- MMBT6429LT1
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT6429LT1G Overview
This device has a DC current gain of 500 @ 100μA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 600mV.A VCE saturation (Max) of 600mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 200mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 45V volts can be used.A maximum collector current of 200mA volts is possible.
MMBT6429LT1G Features
the DC current gain for this device is 500 @ 100μA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 100MHz
MMBT6429LT1G Applications
There are a lot of ON Semiconductor
MMBT6429LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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