MMBT6429LT1
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- Mfr.Part #
- MMBT6429LT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS SS NPN 45V LN SOT23
- Stock
- 10,165
- In Stock ：
- 10,165
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 45V
- Transistor Type :
- NPN
- Collector Emitter Saturation Voltage :
- 600mV
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Surface Mount :
- yes
- Polarity/Channel Type :
- NPN
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Halogen Free :
- Halogen Free
- Transition Frequency :
- 100MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Transistor Application :
- AMPLIFIER
- Peak Reflow Temperature (Cel) :
- 260
- Max Breakdown Voltage :
- 45V
- Number of Terminations :
- 3
- REACH SVHC :
- No SVHC
- Pbfree Code :
- yes
- Weight :
- 4.535924g
- Height :
- 1.01mm
- hFE Min :
- 500
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 55V
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2004
- Collector Emitter Breakdown Voltage :
- 45V
- Operating Temperature :
- -55°C~150°C TJ
- Voltage - Rated DC :
- 45V
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 500 @ 100μA 5V
- Terminal Form :
- Gull wing
- Current Rating :
- 200mA
- Length :
- 3.04mm
- Max Power Dissipation :
- 225mW
- Gain Bandwidth Product :
- 700MHz
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Width :
- 1.4mm
- Factory Lead Time :
- 4 Weeks
- Base Part Number :
- MMBT6429
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Collector Current :
- 200mA
- Current - Collector Cutoff (Max) :
- 100nA
- Frequency :
- 700MHz
- Emitter Base Voltage (VEBO) :
- 6V
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Contact Plating :
- Tin
- Power Dissipation :
- 300mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- MMBT6429LT1
MMBT6429LT1 Documents
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT6429LT1G Overview
This device has a DC current gain of 500 @ 100μA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 600mV.A VCE saturation (Max) of 600mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 200mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 45V volts can be used.A maximum collector current of 200mA volts is possible.
MMBT6429LT1G Features
the DC current gain for this device is 500 @ 100μA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 100MHz
MMBT6429LT1G Applications
There are a lot of ON Semiconductor
MMBT6429LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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