MMBT6428LT1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Current Rating :

200mA

Polarity/Channel Type :

NPN

hFE Min :

250

Collector Base Voltage (VCBO) :

60V

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Number of Elements :

1

REACH SVHC :

No SVHC

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Collector Emitter Breakdown Voltage :

50V

JESD-609 Code :

e3

Power Dissipation :

300mW

Frequency :

700MHz

Collector Emitter Voltage (VCEO) :

50V

Max Power Dissipation :

225mW

Surface Mount :

yes

Terminal Form :

Gull wing

Length :

3.04mm

Current - Collector Cutoff (Max) :

100nA

Package / Case :

TO-236-3, SC-59, SOT-23-3

Published :

2005

ECCN Code :

EAR99

Pin Count :

3

Collector Emitter Saturation Voltage :

600mV

Voltage - Rated DC :

50V

Packaging :

Tape and Reel (TR)

Number of Pins :

3

Gain Bandwidth Product :

700MHz

Number of Terminations :

3

Transistor Type :

NPN

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 100mA

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

250 @ 100μA 5V

Base Part Number :

MMBT6428

Terminal Position :

Dual

Height :

1.11mm

Emitter Base Voltage (VEBO) :

6V

Contact Plating :

Tin

Transition Frequency :

100MHz

Factory Lead Time :

4 Weeks

Time@Peak Reflow Temperature-Max (s) :

40

Max Collector Current :

200mA

Width :

2.64mm

Max Breakdown Voltage :

50V

Transistor Application :

AMPLIFIER

Transistor Element Material :

SILICON

Lead Free :

Lead Free