MMBT6428LT1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Radiation Hardening :

No

Frequency :

700MHz

Number of Pins :

3

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

40

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 100mA

Max Power Dissipation :

225mW

JESD-609 Code :

e3

DC Current Gain (hFE) (Min) @ Ic, Vce :

250 @ 100μA 5V

Height :

1.11mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Length :

3.04mm

Current - Collector Cutoff (Max) :

100nA

Collector Emitter Saturation Voltage :

600mV

Terminal Form :

Gull wing

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Transistor Type :

NPN

Collector Base Voltage (VCBO) :

60V

Transistor Application :

AMPLIFIER

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Position :

Dual

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

260

Max Breakdown Voltage :

50V

Voltage - Rated DC :

50V

Base Part Number :

MMBT6428

Pbfree Code :

yes

Emitter Base Voltage (VEBO) :

6V

REACH SVHC :

No SVHC

Factory Lead Time :

4 Weeks

Collector Emitter Breakdown Voltage :

50V

Polarity/Channel Type :

NPN

Contact Plating :

Tin

Number of Terminations :

3

Gain Bandwidth Product :

700MHz

Collector Emitter Voltage (VCEO) :

50V

Published :

2005

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Width :

2.64mm

Power Dissipation :

300mW

Number of Elements :

1

Transition Frequency :

100MHz

Packaging :

Tape and Reel (TR)

Current Rating :

200mA

hFE Min :

250

Max Collector Current :

200mA

Lead Free :

Lead Free