MMBT6427LT3G
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- Mfr.Part #
- MMBT6427LT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 40V 0.5A SOT23-3
- Stock
- 25,393
- In Stock ：
- 25,393
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Power Dissipation :
- 225mW
- Transistor Type :
- NPN - Darlington
- Lead Free :
- Lead Free
- Base Part Number :
- MMBT6427
- Collector Emitter Voltage (VCEO) :
- 1.5V
- Emitter Base Voltage (VEBO) :
- 12V
- Collector Base Voltage (VCBO) :
- 40V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20000 @ 100mA 5V
- Collector Emitter Breakdown Voltage :
- 40V
- Voltage - Rated DC :
- 40V
- Number of Pins :
- 3
- Max Operating Temperature :
- 150°C
- Max Collector Current :
- 500mA
- Mounting Type :
- Surface Mount
- Collector Emitter Saturation Voltage :
- 1.2V
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 500μA, 500mA
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- RoHS Status :
- RoHS Compliant
- Current Rating :
- 500mA
- Polarity :
- NPN
- Published :
- 2016
- Min Operating Temperature :
- -55°C
- Current - Collector Cutoff (Max) :
- 1μA
- Mount :
- Surface Mount
- Datasheets
- MMBT6427LT3G
NPN - Darlington 1μA 1 Elements TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT6427LT3G Overview
In this device, the DC current gain is 20000 @ 100mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 500μA, 500mA.With the emitter base voltage set at 12V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MMBT6427LT3G Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.5V @ 500μA, 500mA
the emitter base voltage is kept at 12V
the current rating of this device is 500mA
MMBT6427LT3G Applications
There are a lot of ON Semiconductor
MMBT6427LT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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