MMBT5962

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Base Voltage (VCBO) :

45V

Current Rating :

100mA

Vce Saturation (Max) @ Ib, Ic :

200mV @ 500μA, 10mA

Base Part Number :

MMBT5962

Operating Temperature :

-55°C~150°C TJ

Max Collector Current :

100mA

hFE Min :

600

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Collector Emitter Breakdown Voltage :

45V

Collector Emitter Saturation Voltage :

200mV

Current - Collector Cutoff (Max) :

2nA ICBO

Package / Case :

TO-236-3, SC-59, SOT-23-3

Transistor Element Material :

SILICON

Mount :

Surface Mount

Transition Frequency :

100MHz

Pbfree Code :

yes

Length :

2.9mm

Height :

930μm

Published :

1997

Factory Lead Time :

39 Weeks

Number of Pins :

3

Mounting Type :

Surface Mount

Number of Terminations :

3

Power Dissipation :

350mW

Radiation Hardening :

No

Lead Free :

Lead Free

Number of Elements :

1

Lifecycle Status :

ACTIVE (Last Updated: 22 hours ago)

Transistor Type :

NPN

Width :

1.3mm

Max Power Dissipation :

350mW

Terminal Form :

Gull wing

Element Configuration :

Single

Emitter Base Voltage (VEBO) :

8V

Collector Emitter Voltage (VCEO) :

45V

Polarity/Channel Type :

NPN

Voltage - Rated DC :

45V

Weight :

30mg

Contact Plating :

Tin

Max Breakdown Voltage :

45V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

600 @ 10mA 5V

ECCN Code :

EAR99

Terminal Position :

Dual

JESD-609 Code :

e3

Transistor Application :

AMPLIFIER