MMBT5962

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Voltage (VCEO) :

45V

RoHS Status :

ROHS3 Compliant

Collector Emitter Breakdown Voltage :

45V

Mount :

Surface Mount

Published :

1997

Packaging :

Tape and Reel (TR)

Vce Saturation (Max) @ Ib, Ic :

200mV @ 500μA, 10mA

Number of Elements :

1

Emitter Base Voltage (VEBO) :

8V

Max Power Dissipation :

350mW

Pbfree Code :

yes

Polarity/Channel Type :

NPN

Lead Free :

Lead Free

Element Configuration :

Single

JESD-609 Code :

e3

Mounting Type :

Surface Mount

hFE Min :

600

Terminal Form :

Gull wing

Transition Frequency :

100MHz

Current - Collector Cutoff (Max) :

2nA ICBO

Max Collector Current :

100mA

Package / Case :

TO-236-3, SC-59, SOT-23-3

DC Current Gain (hFE) (Min) @ Ic, Vce :

600 @ 10mA 5V

Power Dissipation :

350mW

Lifecycle Status :

ACTIVE (Last Updated: 22 hours ago)

Width :

1.3mm

Terminal Position :

Dual

Voltage - Rated DC :

45V

Number of Pins :

3

Factory Lead Time :

39 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Breakdown Voltage :

45V

Transistor Application :

AMPLIFIER

Operating Temperature :

-55°C~150°C TJ

Collector Emitter Saturation Voltage :

200mV

Number of Terminations :

3

ECCN Code :

EAR99

Transistor Type :

NPN

Height :

930μm

Contact Plating :

Tin

Weight :

30mg

Radiation Hardening :

No

Length :

2.9mm

Base Part Number :

MMBT5962

Transistor Element Material :

SILICON

Collector Base Voltage (VCBO) :

45V

Current Rating :

100mA